ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = -5V T = 25°C unless otherwise specified
A
ALD114835/ALD114935
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
I = 1µA, V = 0.1V
DS
Gate Threshold Voltage
Offset Voltage
V
-3.55
-3.50
7
-3.45
20
V
GS(th)
OS
DS
V
mV
V
-V
GS(th)1 GS(th)2
Offset VoltageTempco
TC
TC
5
µV/ °C
mV/ °C
V
= V
DS1
VOS
DS2
= 1µA, V = 0.1V
DS
GateThreshold Voltage Tempco
-1.7
0.0
+1.6
I
D
I
D
I
D
VGS(th)
= 20µA, V
= 40µA, V
= 0.1V
= 0.1V
DS
DS
On Drain Current
I
12.0
3.0
mA
V
V
= +6.0V, V
= +0.5V, V
= +5V
= +5V
DS (ON)
GS
GS
DS
DS
Forward Transconductance
G
FS
1.4
mmho
V
V
= +0.5V
= +5.5V
GS
DS
Transconductance Mismatch
Output Conductance
∆G
1.8
68
%
FS
G
OS
µmho
V
V
= +0.5V
= +5.5V
GS
DS
Drain Source On Resistance
R
540
Ω
V
V
= 0.1V
= +0.0V
DS (ON)
DS
GS
Drain Source On Resistance
Tolerance
∆R
∆R
5
%
%
V
DS (ON)
DS (ON)
DSX
Drain Source On Resistance
Mismatch
0.5
Drain Source Breakdown
Voltage
BV
I
10
I
V
= 1.0µA
DS
= -4.5V
GS
GS
Drain Source Leakage Current1
10
3
400
4
pA
nA
V
T
= -4.5V, V
=+5V
DS (OFF)
DS
= 125°C
A
Gate Leakage Current1
I
200
1
pA
nA
V
= 0V, V
=125°C
= 5V
GS
GSS
DS
T
A
Input Capacitance
C
C
2.5
0.1
10
pF
pF
ns
ns
ISS
Transfer Reverse Capacitance
Turn-on Delay Time
RSS
+
+
t
V
V
= 5V, R = 5KΩ
L
on
off
Turn-off Delay Time
t
10
= 5V, R = 5KΩ
L
Crosstalk
60
dB
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD114835/ALD114935
Advanced Linear Devices
2 of 11
ALD [ ADVANCED LINEAR DEVICES ]
