ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
Gate-Source voltage,
V
GS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V TA = 25
°
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD114835 / ALD114935
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
VOS
Min
-3.55
Typ
-3.50
Max
-3.45
Unit
V
Test Conditions
IDS =1µA
VDS = 0.1V
Offset Voltage
VGS(th)1 - VGS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
7
20
mV
TCVOS
TCVGS(th)
5
-1.7
0.0
+1.6
12.0
3.0
1.4
µV/ °C
mV/
°C
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
VGS = +6.0V, VDS =+5V
VGS = +0.5V, VDS =+5V
VGS = +0.5V
VDS = +5.5V
On Drain Current
IDS (ON)
GFS
mA
Forward Transconductance
mmho
Transconductance Mismatch
∆G
FS
GOS
RDS (ON)
1.8
%
Output Conductance
68
µmho
VGS =+0.5V
VDS = +5.5V
VDS = +0.1V
VGS = +0.0V
Drain Source On Resistance
540
Ω
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
∆R
DS (ON)
5
%
∆R
DS (ON)
BVDSX
IDS (OFF)
10
0.5
%
V
IDS = 1.0µA
VGS = -4.5V
VGS = -4.5V, VDS =+5V
TA = 125°C
VDS = 0V VGS = +10V
TA =125°C
10
100
4
30
1
pA
nA
pA
nA
pF
Gate Leakage Current
1
IGSS
CISS
CRSS
ton
toff
3
Input Capacitance
2.5
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
0.1
10
10
60
pF
ns
ns
dB
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Notes:
1
Consists of junction leakage currents
ALD114835/ALD114935
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
