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ALD1123ESC 参数 Datasheet PDF下载

ALD1123ESC图片预览
型号: ALD1123ESC
PDF下载: 下载PDF文件 查看货源
内容描述: QUAD /双EPAD精密匹配的一对N沟道MOSFET阵列 [QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY]
分类和应用:
文件页数/大小: 8 页 / 58 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
 浏览型号ALD1123ESC的Datasheet PDF文件第1页浏览型号ALD1123ESC的Datasheet PDF文件第2页浏览型号ALD1123ESC的Datasheet PDF文件第3页浏览型号ALD1123ESC的Datasheet PDF文件第4页浏览型号ALD1123ESC的Datasheet PDF文件第5页浏览型号ALD1123ESC的Datasheet PDF文件第6页浏览型号ALD1123ESC的Datasheet PDF文件第8页  
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT
(mA)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
DRAIN SOURCE ON CURRENT
(
µA)
Zero Temperature
Coefficient (ZTC)
125°C
5
4
3
0°C
2
-55°C
-25°C
ZTC
125°C
ZTC
125°C
50
V
t
= 1.0V
{
- 25°C
V
t
= 1.2V
- 25°C
{
V
t
= 1.4V
- 25°C
{
1
0
0
1
2
3
70°C
4
125°C
0
5
1.0
1.2
1.4
1.6
1.8
2.0
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT,
BIAS CURRENT (µA)
CHANGE IN DIFFERENTIAL
THRESHOLDVOLTAGE (mV)
+10
+8
+6
+4
+2
0
-2
-4
-6
-8
-10
-50
-25
0
10000
REPRESENTATIVE UNITS
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
V
DS
= R
ON
• I
DS(ON)
V
GS
= +0.9V to +5.0V
V
DS
= 5.0V
D
V
DS
I
DS(ON)
S
V
DS
= 0.5V
1000
100
10
1.0
V
GS
0.1
25
50
75
100
125
0.1
1.0
10
100
1000
10000
AMBIENT TEMPERATURE (°C)
ON - RESISTANCE (KΩ)
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
5
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
5
DRAIN SOURCE ON CURRENT
(mA)
GATE SOURCE VOLTAGE (V)
D
V
DS
I
DS(ON)
4
3
2
1
0
0.1
V
GS
S
V
DS
= 0.5V
T
A
= +125°C
4
3
V
t
= 1.000V
VDS = VGS
T
A
= -55°C
V
DS
= 0.5V
T
A
= +25°C
T
A
= 0°C
2
T
A
= +50°C
1
0
0
1
2
3
T
A
= +125°C
4
5
V
DS
= 5V
T
A
= +25°C
V
DS
= 5V
V
DS
= R
ON
• I
DS(ON)
T
A
= +125°C
1
10
100
1000
10000
DRAIN SOURCE ON CURRENT (µA)
OUTPUT VOLTAGE (V)
ALD1123E/ALD1121E
Advanced Linear Devices
7