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ALD1121EPAL 参数 Datasheet PDF下载

ALD1121EPAL图片预览
型号: ALD1121EPAL
PDF下载: 下载PDF文件 查看货源
内容描述: QUAD /双EPAD®精密N沟道匹配的一对MOSFET阵列 [QUAD/DUAL EPAD® PRECISION N-CHANNEL MATCHED PAIR MOSFET ARRAY]
分类和应用:
文件页数/大小: 14 页 / 148 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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TYPICAL PERFORMANCE CHARACTERISTICS (cont.)  
DRAIN SOURCE ON CURRENT, BIAS  
CURRENT vs. AMBIENT TEMPERATURE  
DRAIN SOURCE ON CURRENT, BIAS  
CURRENT vs. AMBIENT TEMPERATURE  
100  
50  
5
4
Zero Temperature  
Coefficient (ZTC)  
ZTC  
125°C  
ZTC  
125°C  
-55°C  
-25°C  
125°C  
3
2
0°C  
{
V
t
= 1.2V  
{
{
V
V
t
t
= 1.0V  
= 1.4V  
1
0
- 25°C  
- 25°C  
- 25°C  
70°C  
125°C  
0
1.0  
1.4  
1.8  
1.2  
2.0  
0
1
2
3
4
5
1.6  
GATE AND DRAIN SOURCE VOLTAGE  
(VGS = VDS) (V)  
GATE AND DRAIN SOURCE VOLTAGE  
(VGS = VDS) (V)  
CHANGE IN DIFFERENTIAL THRESHOLD  
VOLTAGE vs. AMBIENT TEMPERATURE  
DRAIN SOURCE ON CURRENT, BIAS  
CURRENT vs. ON - RESISTANCE  
10000  
1000  
+10  
+8  
V
V
= R  
• I  
= +0.9V to +5.0V  
DS  
GS  
ON DS(ON)  
REPRESENTATIVE UNITS  
+6  
+4  
+2  
V
= 5.0V  
DS  
100  
10  
V
D
0
-2  
-4  
DS  
I
V
GS  
DS(ON)  
1.0  
-6  
-8  
S
V
= 0.5V  
DS  
0.1  
-10  
-50  
-25  
0
25  
50  
75  
100  
125  
0.1  
1.0  
10  
100  
1000  
10000  
AMBIENT TEMPERATURE (°C)  
ON - RESISTANCE (K)  
DRAIN SOURCE ON CURRENT vs.  
OUTPUT VOLTAGE  
GATE SOURCE VOLTAGE vs. DRAIN  
SOURCE ON CURRENT  
5
4
3
5
4
V
D
DS  
V = 1.000V  
t
V = 0.5V  
DS  
= +125°C  
A
V
= V  
T
DS  
GS  
I
V
DS(ON)  
GS  
T
= -55°C  
A
S
3
2
1
V
DS  
= 0.5V  
T
= 0°C  
A
T
= +25°C  
A
V
= 5V  
2
1
DS  
= +25°C  
T
= +50°C  
A
T
A
V
= 5V  
DS  
= +125°C  
V
DS  
= R  
• I  
ON DS(ON)  
T
T
= +125°C  
A
A
0
0
1
0.1  
10  
100  
1000  
10000  
0
1
2
3
4
5
OUTPUT VOLTAGE (V)  
DRAIN SOURCE ON CURRENT (µA)  
ALD1121E/ALD1123E  
Advanced Linear Devices  
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