OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
T
A
= 25
°
C V+ = +5.0V unless otherwise specified
Parameter
Transconductance
Transconductance Match
Low Level Output
Conductance
High Level Output
Conductance
Drain Off Leakage Current
Symbol
gm
∆gm
ALD1121E
Min
Typ
1.4
25
Max
Min
ALD1123E
Typ
1.4
25
Max
Unit
mA/V
µA/V
Test
Conditions
V
D
= 10V,V
G
=V
t
+ 4.0
V
D
= 10V,V
G
=V
t
+ 4.0
g
OL
6
6
µA/V
V
G
= V
t
+0.5V
g
OH
I
D(OFF)
68
5
400
4
100
1
68
5
400
4
100
1
µA/V
pA
nA
pA
nA
pF
dB
Hours
%
V
G
= V
t
+4.0V
T
A
= 125°C
Gate Leakage Current
I
GSS
10
10
T
A
= 125°C
Input Capacitance
Cross Talk
Relaxation Time Constant
4
Relaxation Voltage
4
C
ISS
25
60
25
60
2
-0.3
f = 100KHz
t
RLX
V
RLX
2
-0.3
1.0V
≤
V
t
≤
3.0V
E-TRIM CHARACTERISTICS
T
A
= 25
°
C V+ = +5.0V unless otherwise specified
Parameter
E-trim V
t
Range
4
Resolution of V
t
E-trim Pulse Step
4
Change in V
t
Per
E-trim Pulse
4
Symbol
V
t
ALD1121E
Min
Typ
1.000
Max
3.000
ALD1123E
Min
Typ
1.000
Max
3.000
Unit
V
Test
Conditions
RV
t
∆V
t
/ N
0.1
0.5
0.05
1
0.1
0.5
0.05
1
mV
mV/ pulse
V
t
= 1.0V
V
t
= 2.5V
E-trim Pulse Voltage
4
E-trim Pulse Current
4
Pulse Frequency
4
Vp
Ip
ƒ pulse
11.75
12.00
2
50
12.25
11.75
12.00
2
50
12.25
V
mA
KH
Z
ALD1121E/ALD1123E
Advanced Linear Devices
4 of 14
ALD [ ADVANCED LINEAR DEVICES ]
