ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
13.2V
13.2V
500 mW
DS
GS
Operating temperature range PA, SA, PB, SB package
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
DA, DB package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
T
= 25°C unless otherwise specified
A
ALD1106
ALD1116
Typ
Test
Parameter
Symbol
Min
Typ
Max
Min
Max
Unit
Conditions
Gate Threshold
Voltage
V
0.4
0.7
1.0
0.4
0.7
1.0
V
I
= 1.0µA V
= V
GS DS
T
DS
Offset Voltage
V
2
10
2
10
mV
I = 10µA V = V
DS GS DS
OS
V
-V
GS1 GS2
Gate Threshold
Temperature
Drift2
TC
-1.2
4.8
-1.2
4.8
mV/°C
VT
On Drain
Current
I
3.0
1.0
3.0
1.0
mA
V
V
= V = 5V
DS
DS (ON)
GS
DS
Transconductance
Mismatch
G
IS
1.8
0.5
1.8
0.5
mmho
%
= 5V I = 10mA
DS
∆G
fs
Output
Conductance
G
200
200
µmho
V
V
= 5V I = 10mA
DS
OS
DS
DS
Drain Source
On Resistance
R
350
0.5
500
350
0.5
500
Ω
%
V
= 0.1V V = 5V
GS
DS (ON)
Drain Source
On Resistence
Mismatch
∆
V
= 0.1V V = 5V
GS
DS (ON)
DS
Drain Source
Breakdown
Voltage
BV
DSS
12
12
I
= 1.0µA V
= 0V
GS
DS
Off Drain
Current1
I
10
0.1
1
400
4
10
0.1
1
400
4
pA
nA
V
T
=12V
= 125°C
V
= 0V
GS
DS (OFF)
DS
A
Gate Leakage
Current
I
10
1
10
1
pA
nA
V
= 0V V
DS
= 125°C
= 12V
GS
GSS
T
A
Input
Capacitance 2
C
3
3
pF
ISS
1
Notes:
Consists of junction leakage currents
Sample tested parameters
2
ALD1106/ALD1116
Advanced Linear Devices
2