ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
Gate-source voltage, V
GS
Power dissipation
Operating temperature range
10.6V
10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
SAL, PAL, SBL, PBL packages
DA, DB packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified
ALD1106
Parameter
Gate Threshold
Voltage
Offset Voltage
V
GS1
-V
GS2
Gate Threshold
Temperature
Drift
2
On Drain
Current
Transconductance
ALD1116
Max
1.0
Min
0.4
Typ
0.7
Max
1.0
Unit
V
Test
Conditions
I
DS
= 1.0µA V
GS
= V
DS
Symbol
V
T
Min
0.4
Typ
0.7
V
OS
2
10
2
10
mV
I
DS
= 10µA V
GS
= V
DS
TC
VT
-1.2
-1.2
mV/°C
I
DS (ON)
3.0
4.8
3.0
4.8
mA
V
GS
= V
DS
= 5V
G
IS
∆G
fs
G
OS
1.0
1.8
0.5
200
1.0
1.8
0.5
200
mmho V
DS
= 5V I
DS
= 10mA
%
µmho
Ω
V
DS
= 5V I
DS
= 10mA
Mismatch
Output
Conductance
Drain Source
R
DS (ON)
On Resistance
Drain Source
On Resistence
Mismatch
Drain Source
Breakdown
Voltage
Off Drain
Current
1
Gate Leakage
Current
Input
Capacitance
2
Notes:
1
2
350
500
350
500
V
DS
= 0.1V V
GS
= 5V
∆
DS (ON)
0.5
0.5
%
V
DS
= 0.1V V
GS
= 5V
BV
DSS
12
12
V
I
DS
= 1.0µA V
GS
= 0V
I
DS (OFF)
10
400
4
10
1
3
10
400
4
10
1
3
pA
nA
pA
nA
pF
V
DS
=12V V
GS
= 0V
T
A
= 125°C
V
DS
= 0V V
GS
= 12V
T
A
= 125°C
I
GSS
C
ISS
0.1
0.1
1
1
Consists of junction leakage currents
Sample tested parameters
ALD1106/ALD1116
Advanced Linear Devices
2 of 11
ALD [ ADVANCED LINEAR DEVICES ]
