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ALD1115SA 参数 Datasheet PDF下载

ALD1115SA图片预览
型号: ALD1115SA
PDF下载: 下载PDF文件 查看货源
内容描述: 互补N沟道和P沟道MOSFET [COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET]
分类和应用:
文件页数/大小: 6 页 / 66 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
Gate-source voltage, V
GS
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
13.2V
13.2V
500 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
PA, SA package
DA package
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified
Parameter
N - Channel
Symbol Min
Typ Max
0.4
0.7
1.0
Unit
V
Test
Conditions
I
DS
= 1µA V
GS
= V
DS
P - Channel
Min
Typ Max
-0.4
-0.7
-1.0
Unit
V
Test
Conditions
I
DS
= -1µA V
GS
= V
DS
Gate Threshold V
T
Voltage
Gate Threshold
Temperature
TC
VT
Drift
On Drain
Current
Trans-.
conductance
Output
Conductance
I
DS (ON)
G
fs
G
OS
-1.2
mV/°C
-1.3
mV/°C
3
4.8
mA
V
GS
= V
DS
= 5V
V
DS
= 5V I
DS
= 10mA
V
DS
= 5V I
DS
= 10mA
V
DS
= 0.1V V
GS
= 5V
I
DS
= 1µA V
GS
=0V
-1.3
-2
mA
V
GS
= V
DS
= -5V
V
DS
= -5V I
DS
= -10mA
V
DS
= -5V I
DS
= -10mA
V
DS
= -0.1V V
GS
= -5V
I
DS
= -1µA V
GS
=0V
1
1.8
mmho
µmho
0.25
0.67
mmho
µmho
200
40
Drain Source
R
DS(ON)
ON Resistance
Drain Source
Breakdown
Voltage
Off Drain
Current
Gate Leakage
Current
Input
Capacitance
BV
DSS
12
350
500
1200
1800
V
-12
V
I
DS(OFF)
I
GSS
C
ISS
10
400
4
30
1
3
pA
nA
pA
nA
pF
V
DS
=12V I
GS
= 0V
T
A
= 125°C
V
DS
= 0V V
GS
=12V
T
A
= 125°C
10
400
4
30
1
3
pA
nA
pA
nA
pF
V
DS
= -12V V
GS
= 0V
T
A
= 125°C
V
DS
= 0V V
GS
=-12V
T
A
= 125°C
0.1
1
1
1
ALD1115
Advanced Linear Devices
2