ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
10.6V
Gate-Source voltage,
V
GS
10.6V
Power dissipation
500 mW
Operating temperature range SCL, PCL, SAL, PAL package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25
°
C unless otherwise specified
ALD110804/ALD110904
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
Min
0.38
Typ
0.40
2
5
-1.7
0.0
+1.6
12.0
3.0
1.4
Max
0.42
10
Unit
V
mV
µV/ °C
mV/
°C
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
VGS = +9.9V, VDS = +5V
VGS = +4.2V, VDS = +5V
VGS = +4.4V
VDS = +9.4V
Test Conditions
IDS = 1µA, VDS = 0.1V
On Drain Current
IDS (ON)
GFS
mA
Forward Transconductance
mmho
Transconductance Mismatch
Output Conductance
∆G
FS
GOS
RDS (ON)
1.8
68
%
µmho
VGS = +4.4V
VDS = +9.4V
VDS = +0.1V
VGS = +4.4V
Drain Source On Resistance
500
Ω
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
∆R
DS (ON)
BVDSX
IDS (OFF)
10
0.5
%
V
IDS = 1.0µA
VGS = -0.6V
VGS = -0.6V, VDS =+5V
V- = -5V
TA = 125°C
VDS = 0V, VGS = 5V
TA =125°C
10
400
4
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current
1
IGSS
CISS
CRSS
ton
toff
3
200
1
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Notes:
1
2.5
0.1
10
10
60
V+ = 5V, RL= 5KΩ
V+ = 5V, RL= 5KΩ
f = 100KHz
Consists of junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices
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