欢迎访问ic37.com |
会员登录 免费注册
发布采购

ALD110808APCL 参数 Datasheet PDF下载

ALD110808APCL图片预览
型号: ALD110808APCL
PDF下载: 下载PDF文件 查看货源
内容描述: QUAD /双N沟道增强型EPAD精密匹配的一对MOSFET阵列 [QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY]
分类和应用:
文件页数/大小: 11 页 / 108 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
 浏览型号ALD110808APCL的Datasheet PDF文件第2页浏览型号ALD110808APCL的Datasheet PDF文件第3页浏览型号ALD110808APCL的Datasheet PDF文件第4页浏览型号ALD110808APCL的Datasheet PDF文件第5页浏览型号ALD110808APCL的Datasheet PDF文件第7页浏览型号ALD110808APCL的Datasheet PDF文件第8页浏览型号ALD110808APCL的Datasheet PDF文件第9页浏览型号ALD110808APCL的Datasheet PDF文件第10页  
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)  
DRAIN SOURCE ON CURRENT, BIAS  
CURRENT vs. AMBIENT TEMPERATURE  
DRAIN SOURCE ON CURRENT, BIAS  
CURRENT vs. AMBIENT TEMPERATURE  
100  
5
4
Zero Temperature  
Coefficient (ZTC)  
-55°C  
-25°C  
125°C  
3
2
0°C  
50  
1
0
- 25°C  
70°C  
125°C  
0
V
V
V
V
GS(TH)  
V
V
GS(TH)  
GS(TH)  
GS(TH)  
GS(TH)  
GS(TH)  
V
+4  
GS(TH)  
V
-1  
GS(TH)  
V
+1  
GS(TH)  
V
+2  
GS(TH)  
V
+3  
GS(TH)  
V
+0.0  
+0.4  
+1.0  
GS(TH)  
+0.2  
+0.6  
+0.8  
GATE AND DRAIN SOURCE VOLTAGE  
(VGS = VDS) (V)  
GATE AND DRAIN SOURCE VOLTAGE  
(VGS = VDS) (V)  
GATE SOURCE VOLTAGE vs. DRAIN  
SOURCE ON CURRENT  
DRAIN-SOURCE ON CURRENT vs. ON RESISTANCE  
V
V
+4  
GS(TH)  
100000  
D
V
DS  
V
A
= 0.5V  
DS  
= +125°C  
T
= 25°C  
=-4.0V to +5.4V  
A
V
=+10V  
10000  
1000  
+3  
GS(TH)  
DS  
T
V
I
GS  
V
GS  
DS(ON)  
V
+2  
+1  
GS(TH)  
100  
10  
1
V
T
= 0.5V  
= +25°C  
DS  
A
V
GS(TH)  
V
= 5V  
DS  
= +25°C  
T
A
V
=+5V  
V
=+0.1V  
DS  
DS  
V
GS(TH)  
V
=+1V  
DS  
V
= 5V  
DS  
= +125°C  
V
= R  
• I  
0.1  
DS  
ON DS(ON)  
T
A
V
-1  
GS(TH)  
0.01  
1
0.1  
10  
100  
1000  
10000  
0.1  
1
10  
100  
1000  
10000  
DRAIN SOURCE ON CURRENT (µA)  
ON RESISTANCE (K)  
OFFSET VOLTAGE vs.  
AMBIENT TEMPERATURE  
DRAIN SOURCE ON CURRENT vs.  
OUTPUT VOLTAGE  
4
3
2
5
4
T
A
= 25°C  
REPRESENTATIVE UNITS  
V
= +10V  
DS  
1
3
2
1
V
= +5V  
0
DS  
-1  
-2  
-3  
-4  
V
= +1V  
DS  
0
V
V
+1  
GS(TH)  
V
+3  
GS(TH)  
V
+2  
GS(TH)  
V
+4  
V
+5  
GS(TH)  
-50  
-25  
0
25  
50  
75  
100  
125  
GS(TH)  
GS(TH)  
OUTPUT VOLTAGE (V)  
AMBIENT TEMPERATURE (°C)  
GATE SOURCE VOLTAGE  
vs. ON - RESISTANCE  
GATE LEAKAGE CURRENT  
vs. AMBIENT TEMPERATURE  
V
+4  
GS(TH)  
600  
D
V
DS  
500  
400  
V
+3  
GS(TH)  
GS(TH)  
+125°C  
I
DS(ON)  
V
GS  
S
V
+2  
300  
200  
100  
0
0.0V V  
5.0V  
DS  
+25°C  
I
GSS  
V
V
+1  
GS(TH)  
GS(TH)  
0.1  
10  
100  
1000  
-50  
0
25  
50  
75  
100  
125  
1
10000  
-25  
ON - RESISTANCE (K)  
AMBIENT TEMPERATURE (°C)  
ALD110808/ALD110808A/ALD110908/ALD110908A  
Advanced Linear Devices  
6 of 11