ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
Gate-source voltage, V
GS
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
-13.2V
-13.2V
500 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
PA, SA, PB, SB package
DA, DB package
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified
ALD1107
Parameter
Gate Threshold
Voltage
Offset Voltage
V
GS1
-V
GS2
Gate Threshold
Temperature
Drift
2
On Drain
Current
Transconductance
ALD1117
Max
-1.0
Min
-0.4
Typ
-0.7
Max
-1.0
Unit
V
Test
Conditions
I
DS
= -1.0µA V
GS
= V
DS
Symbol
V
T
Min
-0.4
Typ
-0.7
V
OS
2
10
2
10
mV
I
DS
= -10µA V
GS
= V
DS
TC
VT
-1.3
-1.3
mV/°C
I
DS (ON)
-1.3
-2
-1.3
-2
mA
V
GS
= V
DS
= -5V
G
IS
∆G
fs
G
OS
0.25
0.67
0.5
40
0.25
0.67
0.5
40
mmho V
DS
= -5V I
DS
= -10mA
%
µmho
Ω
V
DS
= -5V I
DS
= -10mA
Mismatch
Output
Conductance
Drain Source
On Resistance
Drain Source
On Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain
Current
1
Gate Leakage
Current
Input
Capacitance
2
Notes:
1
2
R
DS (ON)
1200
1800
1200
1800
V
DS
= -0.1V V
GS
= -5V
∆R
DS (ON)
0.5
0.5
%
V
DS
= -0.1V V
GS
= -5V
BV
DSS
-12
-12
V
I
DS
= -1.0µA V
GS
= 0V
I
DS (OFF)
10
400
4
10
1
3
10
400
4
10
1
3
pA
nA
pA
nA
pF
V
DS
= -12V V
GS
= 0V
T
A
= 125°C
V
DS
= 0V V
GS
= -12V
T
A
= 125°C
I
GSS
C
ISS
0.1
0.1
1
1
Consists of junction leakage currents
Sample tested parameters
ALD1107/ALD1117
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
