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ALD1103SB 参数 Datasheet PDF下载

ALD1103SB图片预览
型号: ALD1103SB
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道和双P沟道MOSFET MATCHED PAIR [DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR]
分类和应用:
文件页数/大小: 6 页 / 72 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
Gate-source voltage, V
GS
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
13.2V
13.2V
500 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
PB, SB package
DB package
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified
N - Channel
Parameter
Symbol Min
Typ Max
Gate Threshold V
T
0.4
0.7
1.0
Voltage
Offset Voltage
V
GS1
- V
GS2
V
OS
10
Unit
V
Test
Conditions
I
DS
= 10µA V
GS
= V
DS
I
DS
= 100µA V
GS
= V
DS
P - Channel
Min
Typ Max
-0.4
-0.7
-1.2
Unit
V
Test
Conditions
I
DS
= -10µA V
GS
= V
DS
I
DS
= -100µA V
GS
= V
DS
mV
10
mV
Gate Threshold
Temperature
TC
VT
Drift
On Drain
Current
Trans-.
conductance
Mismatch
Output
Conductance
Drain Source
ON Resistance
I
DS (ON)
G
fs
∆G
fs
G
OS
R
DS(ON)
25
-1.2
mV/°C
-1.3
mV/°C
40
mA
V
GS
= V
DS
= 5V
V
DS
= 5V I
DS
= 10mA
-8
-16
mA
V
GS
= V
DS
= -5V
V
DS
= -5V I
DS
= -10mA
5
10
mmho
2
4
mmho
0.5
200
%
µmho
V
DS
= 5V I
DS
= 10mA
V
DS
= 0.1V V
GS
= 5V
0.5
500
%
µmho
V
DS
= -5V I
DS
= -10mA
V
DS
= -0.1V V
GS
= -5V
50
75
180
270
Drain Source
ON Resistance
∆R
DS(ON)
Mismatch
Drain Source
Breakdown
Voltage
Off Drain
Current
Gate Leakage
Current
Input
Capacitance
0.5
%
V
DS
= 0.1V V
GS
= 5V
0.5
%
V
DS
= -0.1V V
GS
= -5V
BV
DSS
I
DS(OFF)
I
GSS
C
ISS
12
V
I
DS
= 10µA V
GS
=0V
V
DS
=12V I
GS
= 0V
T
A
= 125°C
V
DS
= 0V V
GS
=12V
T
A
= 125°C
-12
V
I
DS
= -10µA V
GS
=0V
V
DS
= -12V V
GS
= 0V
T
A
= 125°C
V
DS
= 0V V
GS
=-12V
T
A
= 125°C
0.1
4
4
50
10
10
nA
µA
pA
nA
pF
0.1
4
4
50
10
10
nA
µA
pA
nA
pF
1
1
6
6
ALD1103
Advanced Linear Devices
2