ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
10.6V
10.6V
500mW
DS
GS
Operating temperature range SAL, PALpackages
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
DA package
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified
ALD 1101A
ALD1101B
ALD1101
Test
Parameter
Symbol
Min Typ
Max Min Typ Max
Min Typ Max
Unit
Conditions
= 10µA V = V
DS
Gate Threshold
Voltage
V
V
0.4
0.7
1.0
2
0.4
0.7
1.0 0.4
5
0.7
1.0
10
V
I
I
T
DS
GS
= 100µA V
Offset Voltage
mV
= V
GS DS
OS
DS
V
- V
GS1
GS2
Gate Threshold
TC
-1.2
-1.2
-1.2
mV/°C
VT
Temperature Drift
On Drain Current
I
25
5
40
10
25
5
40
10
25
5
40
10
mA
V
V
= V = 5V
DS
DS (ON)
GS
DS
Transconductance
Mismatch
G
mmho
= 5V I = 10mA
DS
fs
∆G
0.5
0.5
0.5
%
fs
Output
Conductance
G
200
200
200
µmho
V
V
= 5V I = 10mA
DS
OS
DS
DS
Drain Source
ON Resistance
R
50
75
50
75
50
75
Ω
%
V
= 0.1V V
= 0.1V V
= 5V
= 5V
DS(ON)
GS
GS
Drain Source
ON Resistance
Mismatch
∆R
0.5
0.5
0.5
V
DS(ON)
DS
Drain Source
Breakdown
Voltage
BV
12
12
12
I
= 10µA V
=0V
DSS
DS(OFF)
GSS
DS
GS
Off Drain Current
I
I
0.1
1
4
4
0.1
1
4
4
0.1
1
4
4
nA
µA
V
=12V V
= 0V
DS
T = 125°C
A
GS
Gate Leakage
Current
50
10
50
10
50
10
pA
nA
V
=0V
V
=12V
GS
DS
= 125°C
T
A
Input
C
ISS
6
10
6
10
6
10
pF
Capacitance
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
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