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ALD1101SAL 参数 Datasheet PDF下载

ALD1101SAL图片预览
型号: ALD1101SAL
PDF下载: 下载PDF文件 查看货源
内容描述: 双N信道匹配组MOSFET [DUAL N-CHANNEL MATCHED MOSFET PAIR]
分类和应用:
文件页数/大小: 6 页 / 60 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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ABSOLUTE MAXIMUM RATINGS  
Drain-source voltage, V  
Gate-source voltage, V  
Power dissipation  
10.6V  
10.6V  
500mW  
DS  
GS  
Operating temperature range SAL, PALpackages  
0°C to +70°C  
-55°C to +125°C  
-65°C to +150°C  
+260°C  
DA package  
Storage temperature range  
Lead temperature, 10 seconds  
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.  
OPERATING ELECTRICAL CHARACTERISTICS  
T
A
= 25°C unless otherwise specified  
ALD 1101A  
ALD1101B  
ALD1101  
Test  
Parameter  
Symbol  
Min Typ  
Max Min Typ Max  
Min Typ Max  
Unit  
Conditions  
= 10µA V = V  
DS  
Gate Threshold  
Voltage  
V
V
0.4  
0.7  
1.0  
2
0.4  
0.7  
1.0 0.4  
5
0.7  
1.0  
10  
V
I
I
T
DS  
GS  
= 100µA V  
Offset Voltage  
mV  
= V  
GS DS  
OS  
DS  
V
- V  
GS1  
GS2  
Gate Threshold  
TC  
-1.2  
-1.2  
-1.2  
mV/°C  
VT  
Temperature Drift  
On Drain Current  
I
25  
5
40  
10  
25  
5
40  
10  
25  
5
40  
10  
mA  
V
V
= V = 5V  
DS  
DS (ON)  
GS  
DS  
Transconductance  
Mismatch  
G
mmho  
= 5V I = 10mA  
DS  
fs  
G  
0.5  
0.5  
0.5  
%
fs  
Output  
Conductance  
G
200  
200  
200  
µmho  
V
V
= 5V I = 10mA  
DS  
OS  
DS  
DS  
Drain Source  
ON Resistance  
R
50  
75  
50  
75  
50  
75  
%
V
= 0.1V V  
= 0.1V V  
= 5V  
= 5V  
DS(ON)  
GS  
GS  
Drain Source  
ON Resistance  
Mismatch  
R  
0.5  
0.5  
0.5  
V
DS(ON)  
DS  
Drain Source  
Breakdown  
Voltage  
BV  
12  
12  
12  
I
= 10µA V  
=0V  
DSS  
DS(OFF)  
GSS  
DS  
GS  
Off Drain Current  
I
I
0.1  
1
4
4
0.1  
1
4
4
0.1  
1
4
4
nA  
µA  
V
=12V V  
= 0V  
DS  
T = 125°C  
A
GS  
Gate Leakage  
Current  
50  
10  
50  
10  
50  
10  
pA  
nA  
V
=0V  
V
=12V  
GS  
DS  
= 125°C  
T
A
Input  
C
ISS  
6
10  
6
10  
6
10  
pF  
Capacitance  
ALD1101A/ALD1101B/ALD1101  
Advanced Linear Devices  
2 of 6  
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