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AK2573AVB 参数 Datasheet PDF下载

AK2573AVB图片预览
型号: AK2573AVB
PDF下载: 下载PDF文件 查看货源
内容描述: 125M / 156M激光二极管驱动器+ APC [125M / 156M Laser Diode Driver + APC]
分类和应用: 驱动器驱动程序和接口二极管激光二极管接口集成电路PC
文件页数/大小: 38 页 / 266 K
品牌: AKM [ ASAHI KASEI MICROSYSTEMS ]
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ASAHI KASEI  
[AK2573A]  
. Absolute Maximum Rating  
Item  
Supply Voltage  
GND  
Input voltage  
Input Current  
Storage Temperature  
Symbol  
Min  
-0.3  
0.0  
-0.3  
-10  
-55  
Max  
6.0  
0.0  
Unit  
V
V
Remarks  
VDD  
VSS  
VIN  
IIN  
TSTG  
Reference Voltage  
Except VDD  
VDD + 0.3  
10  
V
mA Except VDD  
Note 1  
130  
°C  
Stress beyond “Absolute Maximum Range” may cause permanent damage to the device.  
Note 1: ExceptData retention. Data retention is prescribed at section-(2) EEPROM.  
. Recommended Operation Conditions  
Item  
Operating Ambient  
Power Supply  
Symbol  
Ta1  
VDD1  
VDD2  
VSS  
Min  
-40  
3.1  
3.0  
0.0  
Typ  
Max  
85  
3.5  
3.5  
0.0  
Unit  
°C  
V
V
V
Remarks  
3.3  
3.3  
0.0  
Except AVDD  
AVDD  
ReferenceVoltage  
. Electrical Characteristics  
1. Power Consumption  
Item  
Symbol  
IDD1  
IDD2  
IDD3  
min  
-
typ  
7.8  
15  
-
max  
Unit  
Remarks  
Supply Current 1 (All VDD)  
Supply Current 2 (All VDD)  
Supply Current 3 (AVDD only)  
9.4  
20  
5
mA Note 1, 2, 3  
mA Note 1, 2, 4  
mA Note 1, 5  
-
Note 1: without BIAS and modulation current  
Note 2: I-DAC1 = 0, I-DAC2 = 0, Gain = 1, PDGAIN = 0dB, PDIN = 1V  
Note 3: DATAP = CLKP = “L”, DATAN =CLKN = “H”  
Note 4: 155.52Mbps, PN7  
Note 5: I-DAC1 = I-DAC2 = FFh (Full code), Gain = 1, PDGAIN = 0dB, PDIN = 1V  
2. EEPROM  
Item  
Endurance  
Data retention  
min  
10000  
10  
max  
-
-
Unit  
Write Cycle Note 1  
Year  
Remarks  
Junction Temperature = 85℃  
Note 1: This parameter is characterized and is not 100% tested.  
Important Notice: The AKM factory adjusted data are stored in advance at address location (Device Address = A6h,  
Address = 60h) for the offset of the on-chip temperature sensor. If such excess temperature stress is to be applied to  
the AK2573A which exceeds a guaranteed EEPROM data retention conditions (for 10 years at 85C), it is important to  
read the pre-determined value in advamce and to re-write the same data back into EEPROM after an exposure to the  
excess temperature environment. Even if the exposure time is shorter than the retention time, any accelerated  
temperature stress tests (such as baking) are performed, it is recommended to read the pre-set data first and to  
re-write it after the test. Access to un-used address locations is not functionally guaranteed.  
Refer to section-8.3 for EEPROM map.  
<MS0189-E-01>  
-6-  
2004/5  
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