ASAHI KASEI
[AK2573A]
8.3 EEPROM
EEPROM memory map is shown in Table 8-3, 8-4 and 8-5.
EEPROM access islimitedwith WP pin and Operation mode (refer to Table 9-1, for more information).
WP = “L”: Full access
WP = “H”: User area only with read only
(Note) The AKM factory adjusted data are stored in advance at address (Device Address2 = 011, Address=60h) for
the offset of the on-chip temperature sensor. If such excess temperature stress is to be applied to this device
which exceeds a guaranteed EEPROM data retention conditions ( for 10 years at 85℃), it is important to read
the pre-determined value in advance and to re-write the same data back into EEPROM after an exposure to
the excess temperature environment. Even if the exposure time is shorter than the retention time, any
accelerated temperature stress tests (such as baking) are performed, it is recommended to read the pre-set
data first and to re-write it after the tests.
Table 8-3 EEPROM AddressMAP
Device
Address
A0h
Address DATA (D7-D0)
Initial Remark
Value
00h
00h (0)
～
User Area
(1kbit)
7Fh (127)
80h (128)
～
A0h
A2h
A4h
A4h
A6h
A6h
A6h
No Memory
FFh (255)
00h (0)
～
FFh (255)
00 h(0)
～
E_DAC1_TC
Temperature data for I-DAC1 (1kbit)
00h
00h
00h
00h
Addressing with R_TEMP
(1.5℃ step)
7F h(127)
80h (128)
～
E_DAC2_TC
Temperature data for I-DAC2 (1kbit)
Addressing with R_TEMP
(1.5℃ step)
FFh (255)
00h (0)
～
E_DUTY_TC (5bit)
Temperature
Adjustment (256bit)
E_APC_TRGT_TC (5bit)
Temperature data for APC FB
reference (R_APC_TARGT) (256bit)
MSB 4bit: E_CURRALM_DAC1_TC FFh
LSB 4bit: E_CURRALM_DAC2_TC
Temperature data for CURRALM
(256bit)
Addressing with MSB 5bit of
R_TEMP
(6℃ step)
Addressing with MSB 5bit of
R_TEMP
(6℃ step)
Addressing with MSB 5bit of
R_TEMP
(6℃ step)
data
for
Duty
1Fh(31)
20h (32)
～
3Fh (63)
40h (64)
～
5Fh (95)
A6h
60h (96)
～
Adjustment data
(256bit)
see Table 8-4 and 8-5
7Fh (255)
<MS0189-E-01>
-31-
2004/5
AKM [ ASAHI KASEI MICROSYSTEMS ]
