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AK2572 参数 Datasheet PDF下载

AK2572图片预览
型号: AK2572
PDF下载: 下载PDF文件 查看货源
内容描述: APC为突发模式适用直接调制激光二极管 [APC for Burst Mode Applicable Direct Modulation Laser Diode]
分类和应用: 二极管激光二极管PC
文件页数/大小: 50 页 / 439 K
品牌: AKM [ ASAHI KASEI MICROSYSTEMS ]
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ASAHI KASEI
[AK2572]
Ⅱ.ABSOLUTE
MAXIMUM RATINGS
Item
Symbol
Power Supply Voltage VDD
Ground Level
VSS
Input Voltage
VIN
Input Current
IIN
Storage Temperature
Tstg
Min.
- 0.3
0.0
VSS-0.3
- 10
- 55
Max.
6.0
0.0
VDD+0.3
10
130
Unit
V
V
V
mA
Note
AVDD, DVDD, VDDMD, VDDBI
AVSS, DVSS, VSSBI (Base Voltage)
Excluding VDD-pins
Excluding VDD-pins
Ⅲ.RECOMMENDED
OPERATING CONDITIONS
Symbol
Min.
Typ.
Max.
Unit
Note
Ta
- 40
+ 85
VDD
3.0
3.3
3.5
V
3.3V (-9% / +6%)
Power Supply Voltage
VSS
0.0
0.0
0.0
V
Base Voltage
< Important Notice > Please pay attention not to keep the condition of VDD≦1.5V which makes that the Power
On Reset function of AK2572 cannot operate correctly, AK2572 supplies the abnormal LD current and the
possibility of damaging LD increases.
Item
Operating Ambient Temperature
Ⅳ.ELECTRICAL
CHARACTERISTICS
(1) Current Consumption
Item
Symbol
Min.
Typ.
Max.
Unit
Note
Current Consumption (All VDD-pins)
IDD
21
26
mA
[*1], [*2]
[*1] It doesn’t include the output current of I-DACs.
[*2] R_DACx=FFh (x=1~3), R_DAC1,2_GAIN=1, R_DAC3_GAIN=0, PDGAIN=0dB, PDIN=1V
(2) EEPROM Characteristics
Item
Min.
Max.
Unit
Condition
EEPROM Write Cycle
1000
times
[*]
Junction temperature Tj=85℃
EEPROM Data Retention Time
10
year
[*] This parameter is characterized and is not 100% tested.
< Important Notice > The adjusted data in AKM factory are stored in advance at address location (Device
Address=A6h, Address=60h) for the offset voltage of the On-chip temperature sensor. If such excessive
temperature stress is to be applied to the AK2572 which exceeds a guaranteed EEPROM data retention
conditions (for 10 years at 85℃), it is important to read the pre-determined data in advance and to re-write the
same data back into EEPROM after an exposure to the excessive temperature environment. Even if the
exposure time is shorter than the retention time, any accelerated temperature stress tests (such as baking) are
performed, it is recommended to read the pre-set data first and to re-write it after the test. Access to unused
address locations is not functionally guaranteed. Please refer to Section 9.4, “EEPROM Configuration”.
(3) Digital Input / Output Pin DC Characteristics
Item
Symbol
Min.
High Level Input Voltage
VIH
2.0
Low Level Input Voltage
VIL
High Level Output Voltage VOH 0.9VDD
Low Level Output Voltage
Input Leakage Current
Input Leakage Current 2
VOL
IL1
IL2
Max.
0.8
0.4
10
350
-6-
Unit
V
V
V
Condition
IOH
- 0.2mA
IOL=1mA (SDA-pin, TXFAULT-pin)
V
IOL=0.2mA (Excluding SDA, TXFAULT)
μA
Excluding WP-pin
μA
WP-pin
<MS0290-E-01>
2004/8