AH8113
CMOS HALL SWITCH
AiT Semiconductor Inc.
www.ait-ic.com
LOW CURRENT CONSUMPTION, HIGH SENSITIVITY
ABSOLUTE MAXIMUM RATINGS
VDD, Supply Voltage
-0.3V ~ 6.0V
-1mA ~ 4.5mA
-0.3V ~ 6.0V
-1mA~2.0mA
-40°C ~ +150°C
150°C
IDD, Operating Current
VOUT, Output Voltage
IOUT, Output Current
TS, Storage Temperature Range
TJ, Maximum Junction Temperature
ESD Protection
4000V
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = +25℃, VDD = 3.0V, unless otherwise specified
Parameter
AC/DC Characteristics
Symbol
Conditions
Min
Typ
Max
Unit
Supply Voltage
VDD
1.65
-
3
6.0
10
3.5
4.5
8
V
uA
mA
mA
uA
V
Averaged Supply Current
ISAVG
1
0.5
-
Averaged Current During Operating Time ISOPAVG
2.0
-
Peak Current During Operating Time
Supply Current During Standby Time
Output Saturation Voltage
Output on Leakage Current
Output Rise Time
ISOPT
ISSTB
VOUTSAT IOUT= 1mA
IOUTLEAK
1
1.9
0.13
0.01
0.5
0.1
100
140
0.071
12
-
0.4
1
-
uA
us
us
us
ms
%
tr
tf
RL=2.7kΩ, CL=10pF
RL=2.7kΩ, CL=10pF
-
1
Output Fall Time
-
1
Operating Time
tOP
25
60
-
160
240
-
Standby Time
tSTB
tOP/tSTB
tSTU
Duty Cycle
Start-up Time of IC
-
20
us
REV1.3
- AUG 2011 RELEASED, MAR 2017 UPDATED -
- 3 -
AITSEMI [ AiT Semiconductor ]
