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A93C66M8U 参数 Datasheet PDF下载

A93C66M8U图片预览
型号: A93C66M8U
PDF下载: 下载PDF文件 查看货源
内容描述: [THREE-WIRE SERIAL EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 14 页 / 776 K
品牌: AITSEMI [ AiT Semiconductor ]
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A93C66  
AiT Semiconductor Inc.  
www.ait-ic.com  
THREE-WIRE SERIAL EEPROM  
4K (512 X 8 OR 256 X 16)  
ERASE (ERASE)  
The Erase (ERASE) instruction programs all bits in the specified memory location to the logical “1”state. The  
self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the  
Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250ns (TCS). A logic  
“1” at pin DO indicates that the selected memory location has been erased, and the part is ready for another  
instruction.  
WRITE (WRITE)  
The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location.  
The self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI.  
The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum  
of 250ns (TCS). A logic “0” at DO indicates that programming is still in progress. A logic “1” indicates that the  
memory location at the specified address has been written with the data pattern contained in the instruction  
and the part is ready for further instructions. A Ready/Busy status cannot be obtained if the CS is brought high  
after the end of the self timed programming cycle, TWP.  
ERASE ALL (ERAL)  
The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state and is primarily  
used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high after  
being kept low for a minimum of 250ns (TCS). The ERAL instruction is valid only at VCC = 5.0V ± 10%.  
WRITE ALL (WRAL)  
The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the  
instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for  
a minimum of 250ns (TCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%.  
ERASE/WRITE DISABLE (EWDS)  
To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all  
programming modes and should be executed after all programming operations. The operation of the Read  
instruction is independent of both the EWEN and EWDS instructions and can be executed at any time.  
REV1.0  
- MAY 2012 RELEASED -  
- 8 -