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A93C46M8R 参数 Datasheet PDF下载

A93C46M8R图片预览
型号: A93C46M8R
PDF下载: 下载PDF文件 查看货源
内容描述: [THREE-WIRE SERIAL EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 14 页 / 703 K
品牌: AITSEMI [ AiT Semiconductor ]
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A93C46  
AiT Semiconductor Inc.  
www.ait-ic.com  
THREE-WIRE SERIAL EEPROM  
1K (128 X 8 OR 64 X 16)  
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified memory location to the  
logical “1”state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The  
DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of  
250ns (TCS). A logic “1” at pin DO indicates that the selected memory location has been erased, and the part  
is ready for another instruction.  
WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the  
specified memory location. The self-timed programming cycle, tWP, starts after the last bit of data is received  
at serial data input pin DI. The DO pin outputs the Ready/Busy status of the part if CS is brought high after  
being kept low for a minimum of 250ns (TCS). A logic “0” at DO indicates that programming is still in progress.  
A logic “1” indicates that the memory location at the specified address has been written with the data pattern  
contained in the instruction and the part is ready for further instructions. A Ready/Busy status cannot be  
obtained if the CS is brought high after the end of the self timed programming cycle, TWP.  
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1”  
state and is primarily used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is  
brought high after being kept low for a minimum of 250ns (TCS). The ERAL instruction is valid only at VCC  
5.0V ± 10%.  
=
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns  
specified in the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after  
being kept low for a minimum of 250ns (TCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%.  
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable  
(EWDS) instruction disables all programming modes and should be executed after all programming  
operations. The operation of the Read instruction is independent of both the EWEN and EWDS instructions  
and can be executed at any time.  
REV1.2  
- FEB 2010 RELEASED, FEB 2012 DATED -  
- 8 -