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A8113E5R 参数 Datasheet PDF下载

A8113E5R图片预览
型号: A8113E5R
PDF下载: 下载PDF文件 查看货源
内容描述: [HIGH POWER WHITE LED DRIVER]
分类和应用: 高功率电源驱动
文件页数/大小: 13 页 / 453 K
品牌: AITSEMI [ AiT Semiconductor ]
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A8113  
AiT Semiconductor Inc.  
HIGH POWER WHITE LED DRIVER  
www.ait-ic.com  
300mA ULTRA-LOW NOISE, ULTRA-FAST  
Where: VREF=1.23V typ. (the internal reference voltage) Resistors R1 and R2 should be chosen for  
approximately 50uA divider current. Lower value resistors can be used for improved noise performance, but  
the solution consumes more power. Higher resistor values should be avoided as leakage current into/out of  
FB across R1/R2 creates an offset voltage that artificially increases/decreases the feedback voltage and thus  
erroneously decrease/increases VOUT. The recommended design procedure is to choose R2=30.1kΩ to set  
the divider current at 50uA, C1=22pF for stability, and then calculate using Equation as below:  
In order to improve the stability of the adjustable version, it is suggested that a small compensation capacitor  
be placed between OUT and FB. The suggested value of this capacitor for several resistor ratios is shown in  
the table below.  
Output Voltage Programming Guide  
Output Voltage  
3.3V  
R1  
R2  
R3  
51 kΩ  
30.1 kΩ  
22pF  
A8113 Adjustable Programming  
Thermal Considerations  
Thermal protection limits power dissipation in A8113. When the operation junction temperature exceeds  
165°C, the OTP circuit starts the thermal shutdown function turn the pass element off. The pass element turns  
on again after the junction temperature cools by 30°C.  
For continue operation, do not exceed absolute maximum operation junction temperature 125°C. The power  
dissipation definition in device is:  
PD = (VINVOUT) ×IOUT + VIN×IQ  
REV2.0  
- JUN 2011 RELEASED, SEP 2012 REVISED -  
- 9 -