MSA-1105 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
80 mA
550 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,4]
:
θ
jc
= 125°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8 mW/°C for T
C
> 124°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
Parameters and Test Conditions: I
d
= 60 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
f = 0.05 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
Units
dB
dB
dB
dB
GHz
Min.
10.0
Typ.
12.7
12.0
10.5
±
1.0
1.3
1.5:1
1.7:1
Max.
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Gain Flatness
3 dB Bandwidth
[2]
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
dB
dBm
dBm
psec
V
mV/°C
4.4
3.6
17.5
30.0
200
5.5
–8.0
6.6
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (G
P
).
Part Number Ordering Information
Part Number
MSA-1105-TR1
MSA-1105-STR
No. of Devices
500
10
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-459