MSA-1105 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance[2,4]
:
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
80 mA
550mW
+13dBm
150°C
θjc =125°C/W
–65to150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE=25°C.
3. Derate at 8 mW/°C for TC > 124°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.05GHz
f=0.5GHz
f=1.0GHz
dB
dB
dB
12.7
12.0
10.5
10.0
∆GP
Gain Flatness
3 dB Bandwidth[2]
f=0.1to1.0GHz
dB
± 1.0
1.3
f3 dB
GHz
Input VSWR
f=0.1to1.0GHz
f=0.1to1.0GHz
f=0.5GHz
1.5:1
1.7:1
3.6
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
17.5
30.0
200
5.5
f=0.5GHz
tD
f=0.5GHz
Vd
Device Voltage
4.4
6.6
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (GP).
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-1105-TR1
MSA-1105-STR
500
10
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-459
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
