MSA-0770 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 22 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.04
.05
.06
.08
.10
.12
.20
.30
.37
.42
.46
.47
.47
.51
–7
–11
–24
–38
–48
–58
–82
–107
–123
–140
–154
–167
163
131
13.5
13.5
13.4
13.4
13.2
13.0
12.3
11.6
10.4
9.0
7.7
6.4
4.2
2.3
4.74
4.72
4.70
4.65
4.58
4.47
4.12
3.82
3.33
2.83
2.42
2.08
1.63
1.30
175
170
160
151
141
131
107
85
70
52
37
23
–1
–23
–18.6
–18.4
–18.4
–18.1
–17.8
–17.5
–16.6
–15.7
–15.3
–15.4
–15.4
–15.5
–15.5
–15.9
.118
.120
.121
.124
.133
.133
.148
.163
.171
.170
.170
.169
.167
.160
2
2
6
7
9
9
10
8
7
3
1
–4
–9
–11
.20
.19
.20
.21
.23
.23
.23
.22
.19
.20
.23
.29
.35
.38
–10
–18
–34
–50
–76
–76
–101
–116
–116
–111
–107
–107
–116
–133
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
14
Gain Flat to DC
12
10
30
40
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
16
14
12
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
G
p
(dB)
I
d
(mA)
G
p
(dB)
8
6
4
2
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
20
10
8
10
6
0
0
1
2
3
V
d
(V)
4
5
4
10
20
30
I
d
(mA)
40
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 22 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
G
p
(dB)
14
13
12
15
I
d
= 40 mA
12
G
P
6.0
5.5
I
d
= 15 mA
I
d
= 22 mA
I
d
= 40 mA
NF (dB)
P
1 dB
(dBm)
NF
6
5
4
9
6
3
4.5
0
I
d
= 15 mA
I
d
= 22 mA
NF (dB)
0.5
1.0
2.0
4.0
5.0
P
1 dB
(dBm)
6
5
4
3
–55 –25
+25
+85
P
1 dB
+125
–3
0.1
4.0
0.2 0.3
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=22mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-400