MSA-0670 Absolute Maximum Ratings
Thermal Resistance[2,4]
:
Parameter
AbsoluteMaximum[1]
θjc =130°C/W
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
50 mA
200mW
+13dBm
200°C
–65to200°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 7.7 mW/°C for TC > 174°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
dB
dB
19.0
20.5
± 0.7
1.0
22.0
∆GP
f3 dB
Gain Flatness
f=0.1to0.6GHz
± 1.0
3 dB Bandwidth
GHz
Input VSWR
f=0.1to1.5GHz
f=0.1to1.5GHz
f=0.5GHz
1.9:1
1.8:1
2.8
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
4.0
3.9
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
2.0
f=0.5GHz
14.5
200
3.5
tD
f=0.5GHz
Vd
Device Voltage
3.1
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
6-375
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