Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0520
Features
• Cascadable 50
Ω
Gain Block
• High Output Power:
+23 dBm Typical P
1 dB
at
1.0 GHz
• Low Distortion:
33 dBm Typical IP
3
at 1.0 GHz
• 8.5 dB Typical Gain at
1.0 GHz
• Hermetic Metal/Beryllia
Microstrip Package
BeO disk package for good
thermal characteristics. This
MMIC is designed for use as a
general purpose 50
Ω
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
200 mil BeO Package
Description
The MSA-0520 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
V
CC
> 15 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 12 V
2
5965-9582E
6-358