MGA-82563 Absolute Maximum Ratings
Symbol
V
d
V
gd
V
in
P
in
T
ch
T
STG
Parameter
Device Voltage, RF Output
to Ground
Device Voltage, Gate
to Drain
Range of RF Input Voltage
to Ground
CW RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
dBm
°C
°C
Absolute
Maximum
[1]
5.0
-6.0
+0.5 to -1.0
+13
165
-65 to 150
Thermal Resistance
[2]
:
θ
ch-c
= 180°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
C
= 25°C (T
C
is defined to be the
temperature at the package pins
where contact is made to the
circuit board.)
MGA-82563 Electrical Specifications,
T
C
= 25°C, Z
O
= 50
Ω,
V
d
= 3 V
Symbol
G
test
NF
test
NF
50
Parameters and Test Conditions
Gain in test circuit
[1]
Noise Figure in test circuit
[1]
Noise Figure in 50
Ω
system
f = 2.0 GHz
f = 2.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 0.2–5.0 GHz
f = 0.2–5.0 GHz
mA
63
dB
Units
Min.
12.0
Typ.
13.2
2.2
2.3
2.2
2.2
2.2
2.4
2.7
14.7
14.5
13.5
12.1
10.7
8.8
17.4
17.5
17.3
17.1
17.0
16.8
+31
1.8:1
1.2:1
84
101
2.9
Max. Std Dev
[2]
0.35
0.20
0.20
|S
21
|
2
Gain in 50
Ω
system
dB
0.35
P
1 dB
Output Power at 1 dB Gain Compression
dBm
0.54
IP
3
VSWR
in
VSWR
out
I
d
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
dBm
1.0
Notes:
1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
6-209
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
