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MGA-72543-TR1 参数 Datasheet PDF下载

MGA-72543-TR1图片预览
型号: MGA-72543-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: PHEMT低噪声放大器,具有旁路开关 [PHEMT Low Noise Amplifier with Bypass Switch]
分类和应用: 开关放大器
文件页数/大小: 22 页 / 215 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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3
MGA-72543 Electrical Specifications,
T
C
= +25°C, Z
O
= 50
Ω,
I
d
= 20 mA, V
d
= 3 V, unless noted.
Symbol
Vref test
[1]
NF test
[1]
G
a
test
[1]
IIP
3
test
[1]
IL test
[1]
Ig test
[1]
NF
o
[2]
Parameters and Test Conditions
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
V
d
= 3.0 V (V
ds
= 2.5 V)
V
d
= 3.0 V (=V
ds
+Vc)
V
d
= 3.0 V (=V
ds
+Vc)
V
d
= 3.0 V (V
ds
= 0 V, V
c
= 3 V)
I
d
= 20 mA
I
d
= 20 mA
I
d
= 20 mA
I
d
= 20 mA
I
d
= 0.0 mA
Units
V
dB
dB
dB
dB
uA
dB
13.5
8.5
Min.
0.37
Typ.
0.51
1.5
14.4
10.5
2.5
2.0
1.35
1.38
1.42
1.45
1.54
1.70
14.8
14.2
13.6
13.0
11.2
9.2
+15 .3
+3.2
+8.3
+11.2
+14.9
+17.1
+35
+3.5
+6.2
+10.5
+12.1
+14.8
-55
-60
-57
-60
10.2
19.5
-23.2
0.22
1.1
0.16
3.5
Max.
0.65
1.8
15.5
σ
0.035
0.06
0.13
0.67
0.01
2.0
f = 2.04 GHz V
d
= 3.0 V (=V
ds
+Vc)
G
a
[2]
P
1dB
[1]
f = 2.0 GHz V
d
= 3.0 V (V
ds
= 0 V, V
c
= 3 V) I
d
= 0.0 mA
Minimum Noise Figure
f = 1.0 GHz
As measured in Figure 2 Test Circuit
f = 1.5 GHz
(Γopt computed from s-parameter and
f = 2.0 GHz
noise parameter performance as measured f = 2.5 GHz
in a 50
impedance fixture)
f = 4.0 GHz
f = 6.0 GHz
Associated Gain at NF
o
f = 1.0 GHz
As measured in Figure 2 Test Circuit
f = 1.5 GHz
(Γopt computed from s-parameter and
f = 2.0 GHz
noise parameter performance as measured f = 2.5 GHz
in a 50
impedance fixture)
f = 4.0 GHz
f = 6.0 GHz
Output Power at 1 dB Gain Compression
I
d
= 0 mA
As measured in Figure 1 Test Circuit
I
d
= 5 mA
Frequency = 2.04 GHz
I
d
= 10 mA
I
d
= 20 mA
I
d
= 40 mA
I
d
= 60 mA
Input Third Order Intercept Point
As measured in Figure 1 Test Circuit
Frequency = 2.04 GHz
I
d
= 0 mA
I
d
= 5 mA
I
d
= 10 mA
I
d
= 20 mA
I
d
= 40 mA
I
d
= 60 mA
0.04
dB
0.11
dBm
0.52
IIP
3
[1]
dBm
0.67
ACP
Adjacent Channel Power Rejection,
f = 2 GHz, offset = 1.25 MHz, Pout = 10 dBm I
d
= 30 mA
(CDMA modulation scheme)
I
d
= 40 mA
f = 800 MHz, offset = 900 KHz, Pout = 8 dBm I
d
= 20 mA
As measured in Figure 1 Test Circuit
I
d
= 30 mA
Input Return Loss as measured in Fig. 1
Output Return Loss as measured in Fig. 1
Isolation |S
12
| as measured in Fig. 2
2
dBc
RL
in
[1]
RL
out
[1]
ISOL
[1]
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
dB
dB
dB
Notes:
1. Standard Deviation and Typical Data as measured in the test circuit in Figure 1. Data based at least 500 part sample size
and 3 wafer lots.
2. Typical data computed from s-parameter and noise parameter data measured in a 50Ω system. Data based on 40 parts
from 3 wafer lots.
960 pF
RF
Input
2.7 nH
50 pF
V
ref
1000
4
V
d
56 pF
RF
Input Bias Tee
ICM Fixture
V
d
72x
72x
3
1
2
18 nH
RF
Output
56 pF
V
ref
Bias
Tee
RF
Output
Figure 1. MGA-72543 Production Test Circuit.
Figure 2. MGA-72543 Test Circuit for S, Noise, and
Power Parameters Over Frequency.