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INA-54063-TR1 参数 Datasheet PDF下载

INA-54063-TR1图片预览
型号: INA-54063-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0 GHz的低噪声硅MMIC放大器 [3.0 GHz Low Noise Silicon MMIC Amplifier]
分类和应用: 放大器
文件页数/大小: 10 页 / 116 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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INA-54063 Absolute Maximum Ratings
Symbol
V
d
P
in
T
j
T
STG
Parameter
Supply Voltage, to Ground
CW RF Input Power
Junction Temperature
Storage Temperature
Units
V
dBm
°C
°C
Absolute
Maximum
[1]
12
13
150
-65 to 150
Thermal Resistance
[2]
:
θ
j-c
= 165°C/W
Notes:
1. Operation of this device above any
one of these limits may cause
permanent damage.
2. T
C
= 25°C (T
C
is defined to be the
temperature at the package pins
where contact is made to the
circuit board).
Electrical Specifications,
T
C
= 25°C, Z
O
= 50
Ω,
V
d
= 5 V, unless noted
Symbol
G
P
NF
P
1dB
IP
3
VSWR
in
VSWR
out
I
d
t
d
Parameters and Test Conditions
Power Gain (|S
21
|
2
)
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
f = 1900 MHz
f = 1900 MHz
f = 1900 MHz
f = 1900 MHz
f = 1900 MHz
f = 2150 MHz
f = 1900 MHz
f = 1900 MHz
mA
ps
Units
dB
dB
dBm
dBm
Min.
19
Typ.
21.5
5.0
8.0
17
15.7
1.4
2.4
29
272
36
1.8
Max.
Std.
Dev.
[1]
0.7
0.4
Note:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
6-164