INA-03184 Absolute Maximum Ratings
AbsoluteMaximum[1]
Thermal Resistance:
Parameter
θjc =100°C/W
Device Current
Power Dissipation[2]
RF Input Power
Junction Temperature
Storage Temperature
25 mA
200mW
+13dBm
150°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 10 mW/°C for TC > 130°C.
–65to150°C
INA-03184 Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 10 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=1.5GHz
dB
dB
23.0
25.0
± 0.8
2.5
∆GP
f3 dB
ISO
Gain Flatness
3 dB Bandwidth[2]
ReverseIsolation(|S12|2)
f=0.1to2.0GHz
GHz
dB
f=1.5GHz
35
Input VSWR
f=0.01to2.0GHz
f=0.01to2.0GHz
f=1.5GHz
2.0:1
3.0:1[3]
2.6
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=1.5GHz
–2.0
7
f=1.5GHz
tD
f=1.5GHz
210
4.0
Vd
Device Voltage
3.0
5.0
dV/dT
Device Voltage Temperature Coefficient
mV/°C
+4
Notes:
1. The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is
on the following page.
2. Referenced from 10 MHz Gain (GP).
3. VSWR can be improved by bypassing a 100–200 Ω bias resistor directly to ground. See AN-S012: MagIC Low Noise
Amplifiers.
INA-03184 Part Number Ordering Information
Part Number
No. of Devices
Container
INA-03184-TR1
INA-03184-BLK
1000
100
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-109
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
