2
INA-02184, -02186 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3,4]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
50 mA
400 mW
+13 dBm
+150°C
–65 to 150°C
Thermal Resistance
[2]
:
θ
jc
= 90°C/W — INA-02184
θ
jc
= 100°C/W — INA-02186
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 11.1 mW/°C for T
C
>
144°C for INA-02184.
4. Derate at 10 mW/°C for T
C
> 110°C
for INA-02186.
INA-02184, -02186 Electrical Specifications
[1]
, T
A
= 25°C
G
P
∆G
P
f
3 dB
ISO
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
[2]
Reverse Isolation (|S
12
|
2
)
Input VSWR (Max over Freq. Range)
Output VSWR (Max over Freq. Range)
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
dB
dBm
dBm
psec
V
mV/°C
f = 0.5 GHz
f = 0.01 to 1.0 GHz
dB
dB
GHz
dB
INA-02184
INA-02186
Symbol Parameters and Test Conditions: I
d
= 35 mA, Z
O
= 50
Ω
Units Min. Typ. Max. Min. Typ. Max.
29.0 31.0
±2.0
0.8
39
1.5
1.7
2.0
11
23
330
4.0
5.5
+10
7.0
4.0
29.0 31.0
±2.0
0.8
39
2.0
1.7
2.0
11
23
350
5.5
+10
7.0
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (G
P
).
INA-02184, -02186 Part Number Ordering Information
Part Number
INA-02184-TR1
INA-02184-BLK
INA-02186-TR1
INA-02186-BLK
No. of Devices
1000
100
1000
100
Container
7" Reel
Antistatic Bag
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.