IAM-81008 Absolute Maximum Ratings
Parameter
Device Voltage
Power Dissipation
2,3
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
10 V
300 mW
+14 dBm
+14 dBm
150°C
–65 to 150°C
Thermal Resistance:
θ
jc
= 80°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 4.4 mW/°C for T
C
> 82°C.
IAM-81008 Part Number Ordering Information
Part Number
IAM-81008-TR1
Devices Per Reel
1000
Reel Size
7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
IAM-81008 Electrical Specifications
[1]
, T
A
= 25°C
Symbol
Parameters and Test Conditions: V
cc
= 5 V, Z
O
= 50
Ω,
LO =–5 dBm, RF = –20 dBm
Units
Min.
Typ.
Max.
G
C
F
3 dB
RF
F
3 dB
IF
P
1 dB
IP
3
NF
VSWR
RF
if
LO
if
LO
rf
I
CC
Conversion Gain
RF Bandwidth (G
C
3 dB Down)
IF Bandwidth (G
C
3 dB Down)
IF Output Power at 1 dB Gain Compression
IF Output Third Order Intercept Point
SSB Noise Figure
RF Port VSWR
LO Port VSWR
IF Port VSWR
RF Feedthrough at IF Port
LO Leakage at IF Port
LO Leakage at RF Port
Supply Current
RF = 2 GHz, LO = 1.75 GHz
IF = 250 MHz
LO = 2 GHz
RF = 2 GHz, LO = 1.75 GHz
RF = 2 GHz, LO = 1.75 GHz
RF = 2 GHz, LO = 1.75 GHz
f = 0.05 to 3.5 GHz
f = 0.05 to 3.5 GHz
f < 1 GHz
RF = 2 GHz, LO = 1.75 GHz
LO = 1.75 GHz
LO = 1.75 GHz
dB
GHz
GHz
dBm
dBm
dB
6.0
8.5
3.5
0.6
–6
3
17
1.5:1
2.0:1
1.5:1
10
dBc
dBm
dBm
mA
10
–25
–25
–30
13
16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on
the following page.
7-120