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HSMS-8202-TR1 参数 Datasheet PDF下载

HSMS-8202-TR1图片预览
型号: HSMS-8202-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基微波混频二极管 [Surface Mount Microwave Schottky Mixer Diodes]
分类和应用: 微波混频二极管光电二极管
文件页数/大小: 5 页 / 100 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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2
DC Electrical Specifications, T
A
= 25°C
Symbol Parameters and Test Conditions
V
BR
C
T
∆C
T
R
D
∆R
D
V
F
∆V
F
Breakdown Voltage
I
R
= 10
µA
Total Capacitance
V
R
= 0 V, f = 1 MHz
Capacitance Difference
V
R
= 0 V, f = 1 MHz
Dynamic Resistance
I
F
= 5 mA
Dynamic Resistance Difference
I
F
= 5 mA
Forward Voltage
I
F
= 1 mA
Forward Voltage Difference
I
F
= 1 mA
Lead Code
Package Marking Code in White
where x is date code
HSMS-8101
Units Min. Max.
V
pF
pF
mV
mV
1
R1x
250
4
0.26
14
350
HSMS-8202
Min. Max.
4
0.26
0.04
14
2
250
350
20
2
2Rx
HSMS-8207
Min. Max.
4
0.26
0.04
14
2
250
350
20
7
R7x
HSMS-8209
Min. Max.
4
0.26
0.04
14
2
250
350
20
9
R9x
RF Electrical Parameters, T
A
= 25°C
Symbol
L
c
Z
IF
SWR
Parameter
Conversion Loss at 12 GHz
IF Impedance
SWR at 12 GHz
Units
dB
Typical
6.3
150
1.2
Note:
DC Load Resistance = 0
Ω;
LO Power = 1 mW.
SPICE Parameters
I
S
= 4.6 E-8
R
S
= 6
N = 1.09
B
V
= 7.3
I
BV
= 10E-5
E
G
= 0.69
C
JO
= 0.18 E-12
P
B
(V
J
) = 0.5
M = 0.5
FC = 0.5
TT = 0
Linear Equivalent Circuit
0.08 pF
1.0 nH
1.3 nH
6
0.17 pF
R
j
Self Bias
R
j
1 mA
263
2.5 mA
142