4
Typical Parameters, Single Diode
100
100
10
100
I
(left scale)
F
TA = +85°C
TA = +25°C
TA = –55°C
10
1
10
1
10
0.1
0.01
.1
∆V (right scale)
F
.01
1
0.05
1
0.25
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
– FORWARD VOLTAGE (V)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.10
0.15
0.20
V
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
F
Figure 1. Typical Forward Current vs.
Forward Voltage, HSMS-2850 Series.
Figure 2. Typical Forward Current vs.
Forward Voltage at Temperature,
HSMS-2860 Series.
Figure 3. Typical Forward Voltage
Match, HSMS-2860 Pairs.
10000
30
10,000
R
= 100 KΩ
L
R
= 100 KΩ
20 µA
5 µA
L
915 MHz
10 µA
1000
100
10
10
2.45 GHz
915 MHz
1000
100
2.45 GHz
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
5.8 GHz
1
10
1
5.8 GHz
R
= 100 KΩ
L
1
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
0.1
-50
0.3
-50
-40
-30
-20
-10
0
-40
-30
–40
–30
–20
–10
0
10
POWER IN (dBm)
POWER IN (dBm)
POWER IN (dBm)
Figure 4. +25°C Output Voltage vs.
Input Power, HSMS-2850 at Zero Bias,
HSMS-2860 at 3 µA Bias.
Figure 5. +25°C Expanded Output
Voltage vs. Input Power. See Figure 4.
Figure 6. Dynamic Transfer
Characteristic as a Function of DC Bias,
HSMS-2860.
3.1
40
35
FREQUENCY = 2.45 GHz
2.9
P
R
= -40 dBm
= 100 KΩ
IN
L
2.7
2.5
2.3
30
25
2.1
1.9
20
1.7
1.5
1.3
1.1
0.9
Input Power =
15
10
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
R
= 100 KΩ
L
5
0
10 20 30 40 50 60 70 80 90 100
.1
1
10
100
TEMPERATURE (°C)
BIAS CURRENT (µA)
Figure 7. Voltage Sensitivity as a
Function of DC Bias Current,
HSMS-2860.
Figure 8. Output Voltage vs.
Temperature, HSMS-2850 Series.
Applications Information
See the HSMS-285A data sheet.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
