3
Absolute Maximum Ratings, Ta = +25°C, Single Diode
Symbol
Parameter
Absolute Maximum[1]
HSMS-285x
HSMS-286x
250 mW
4.0 V
PT
PIV
Total Device Dissipation[2]
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
75 mW
2.0 V
TJ
150°C
150°C
TSTG
TOP
-65°C to 150°C -65°C to 150°C
-65°C to 150°C -65°C to 150°C
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. CW Power Dissipation at TLEAD = +25°C. Derate linearly to zero at
maximum rated temperature.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Equivalent Circuit Model
SPICE Parameters
HSMS-2850, HSMS-2860;
Singles
Parameter Units
HSMS-285X HSMS-286X
BV
CJ0
V
pF
eV
A
3.8
0.18
7.0
0.18
0.08 pF
EG
0.69
0.69
IBV
3 x 10E-4
3 x 10E-6
1.06
10E-5
5.0 x 10E-8
1.08
R
IS
A
2 nH
j
N
R
S
RS
Ω
25
5.0
PB (VJ)
PT (XTI)
M
V
0.35
0.65
2
2
0.5
0.5
0.18 pF
RS = series resistance (see Table of SPICE parameters)
8.33 X 10-5 nT
Rj =
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = identity factor (see table of SPICE parameters)
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