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HSMS-282B-TR1 参数 Datasheet PDF下载

HSMS-282B-TR1图片预览
型号: HSMS-282B-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装射频肖特基势垒二极管 [Surface Mount RF Schottky Barrier Diodes]
分类和应用: 二极管射频光电二极管
文件页数/大小: 14 页 / 209 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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Typical Performance, TC = 25°C (unless otherwise noted), Single Diode  
1
100,000  
100  
TA = +125ϒC  
TA = +75ϒC  
TA = +25ϒC  
0.8  
10,000  
1000  
100  
10  
T
A = –25ϒC  
0.6  
0.4  
1
0.1  
TA = +125ϒC  
TA = +75ϒC  
TA = +25ϒC  
0.2  
0
10  
1
0.01  
0
2
4
6
8
0
5
10  
15  
0
0.10  
0.20  
0.30  
0.40  
0.50  
V
– REVERSE VOLTAGE (V)  
V
– REVERSE VOLTAGE (V)  
V
– FORWARD VOLTAGE (V)  
R
R
F
Figure 3. Total Capacitance vs.  
Reverse Voltage.  
Figure 2. Reverse Current vs.  
Reverse Voltage at Temperatures.  
Figure 1. Forward Current vs.  
Forward Voltage at Temperatures.  
1000  
100  
30  
30  
10  
100  
1.0  
I
(Left Scale)  
10  
F
I
(Left Scale)  
F
10  
10  
1
V (Right Scale)  
F
1
1
V (Right Scale)  
F
0.3  
0.2  
0.3  
1
0.10  
0.1  
0.25  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.15  
V - FORWARD VOLTAGE (V)  
F
0.20  
I
– FORWARD CURRENT (mA)  
V
- FORWARD VOLTAGE (V)  
F
F
Figure 4. Dynamic Resistance vs.  
Forward Current.  
Figure 5. Typical V Match, Series Pairs  
f
and Quads at Mixer Bias Levels.  
Figure 6. Typical V Match, Series Pairs  
f
at Detector Bias Levels.  
1
10  
1
10  
9
DC bias = 3 µA  
-25°C  
+25°C  
+75°C  
0.1  
0.1  
0.01  
8
18 nH HSMS-282B  
HSMS-282B  
100 pF  
+25°C  
RF in  
Vo  
RF in  
Vo  
0.001  
0.01  
3.3 nH  
7
68 Ω  
100 pF  
0.0001  
1E-005  
100 KΩ  
4.7 KΩ  
0.001  
6
-40  
-30  
-20  
-10  
0
-20  
-10  
0
10  
20  
30  
0
2
4
6
8
10  
12  
P
– INPUT POWER (dBm)  
P
in  
– INPUT POWER (dBm)  
LOCAL OSCILLATOR POWER (dBm)  
in  
Figure 7. Typical Output Voltage vs.  
Input Power, Small Signal Detector  
Operating at 850 MHz.  
Figure 8. Typical Output Voltage vs.  
Input Power, Large Signal Detector  
Operating at 915 MHz.  
Figure 9. Typical Conversion Loss vs.  
L.O. Drive, 2.0 GHz (Ref AN997).  
4