4
Typical Performance, T
C
= 25
°
C (unless otherwise noted), Single Diode
100
I
F
– FORWARD CURRENT (mA)
C
T
– CAPACITANCE (pF)
I
R
– REVERSE CURRENT (nA)
10
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
100,000
1
10,000
0.8
1000
0.6
1
100
0.4
0.1
10
1
0
5
0.01
0
0.10
0.20
0.30
0.40
0.50
V
F
– FORWARD VOLTAGE (V)
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
10
15
0.2
0
0
2
4
6
8
V
R
– REVERSE VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
Figure 3. Total Capacitance vs.
Reverse Voltage.
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
1000
30
30
100
1.0
10
I
F
(Left Scale)
10
100
I
F
(Left Scale)
10
10
1
∆V
F
(Right Scale)
1
∆V
F
(Right Scale)
1
0.1
1
10
100
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
1
0.10
0.15
0.20
0.1
0.25
I
F
– FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 4. Dynamic Resistance vs.
Forward Current.
Figure 5. Typical V
f
Match, Series Pairs
and Quads at Mixer Bias Levels.
Figure 6. Typical V
f
Match, Series Pairs
at Detector Bias Levels.
1
10
10
V
O
– OUTPUT VOLTAGE (V)
V
O
– OUTPUT VOLTAGE (V)
DC bias = 3
µA
0.1
-25°C
+25°C
+75°C
0.1
0.01
+25°C
CONVERSION LOSS (dB)
1
9
8
0.01
RF in 18 nH HSMS-282B Vo
3.3 nH
100 pF
100 KΩ
0
0.001
0.0001
1E-005
-20
RF in
68
Ω
HSMS-282B
Vo
100 pF
7
4.7 KΩ
20
30
6
0
2
4
6
8
10
12
LOCAL OSCILLATOR POWER (dBm)
0.001
-40
-30
-20
-10
-10
0
10
P
in
– INPUT POWER (dBm)
P
in
– INPUT POWER (dBm)
Figure 7. Typical Output Voltage vs.
Input Power, Small Signal Detector
Operating at 850 MHz.
Figure 8. Typical Output Voltage vs.
Input Power, Large Signal Detector
Operating at 915 MHz.
Figure 9. Typical Conversion Loss vs.
L.O. Drive, 2.0 GHz (Ref AN997).
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
R
D
– DYNAMIC RESISTANCE (Ω)
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (µA)
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
