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HSMS-281C-TR1 参数 Datasheet PDF下载

HSMS-281C-TR1图片预览
型号: HSMS-281C-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装射频肖特基势垒二极管 [Surface Mount RF Schottky Barrier Diodes]
分类和应用: 二极管射频光电二极管
文件页数/大小: 10 页 / 137 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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4
Typical Performance, T
C
= 25
°
C (unless otherwise noted), Single Diode
100
I
F
– FORWARD CURRENT (mA)
100,000
R
D
– DYNAMIC RESISTANCE (Ω)
1000
10,000
I
R
– REVERSE CURRENT (nA)
10
100
1000
1
100
0.1
0.01
0
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
F
– FORWARD VOLTAGE (V)
10
10
1
0
5
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
10
15
1
0.1
1
10
100
V
R
– REVERSE VOLTAGE (V)
I
F
– FORWARD CURRENT (mA)
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
Figure 3. Dynamic Resistance vs.
Forward Current.
1.25
I
F
- FORWARD CURRENT (mA)
30
30
1
10
I
F
(Left Scale)
10
0.75
0.50
∆V
F
(Right Scale)
1
1
0.25
0
0
2
4
6
8
10
12
14
16
V
R
– REVERSE VOLTAGE (V)
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
V
F
- FORWARD VOLTAGE (V)
Figure 4. Total Capacitance vs.
Reverse Voltage.
Figure 5. Typical V
f
Match, Pairs and
Quads.
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
C
T
– CAPACITANCE (pF)