4
HSMP-389x Series Typical Performance, T
C
= 25°C, each diode
100
TOTAL CAPACITANCE (pF)
0.55
0.50
0.45
0.40
0.35
0.30
0.25
1 GHz
0.20
0
4
8
12
16
20
1 MHz
INPUT INTERCEPT POINT (dBm)
120
RF RESISTANCE (OHMS)
10
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
1
10
30
I
F
– FORWARD BIAS CURRENT (mA)
1
0.1
0.01
0.1
1
10
100
I
F
– FORWARD BIAS CURRENT (mA)
V
R
– REVERSE VOLTAGE (V)
Figure 1. Total RF Resistance at 25°C
vs. Forward Bias Current.
Figure 2. Capacitance vs. Reverse
Voltage.
Figure 3. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current.
T
rr
– REVERSE RECOVERY TIME (nS)
200
I
F
– FORWARD CURRENT (mA)
100
160
V
R
= –2V
120
10
1
80
V
R
= –5V
40
V
R
= –10V
0
10
15
20
25
30
0.1
0.01
125°C 25°C –50°C
0
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Figure 4. Typical Reverse Recovery
Time vs. Reverse Voltage.
Figure 5. Forward Current vs. Forward
Voltage.
Typical Applications for Multiple Diode Products
1
2
3
3
2
1
1
2
“ON”
“OFF”
1
0
0
2
+V
–V
3
2
1
1
0
4
5
6
b1
b2
b3
RF in
4
5
6
RF out
Figure 6. HSMP-389L used in a SP3T Switch.
Figure 7. HSMP-389L Unconnected Trio used in a
Dual Voltage, High Isolation Switch.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
