3
HSMP-386x Typical Parameters at T
C
= 25°C
Part Number
HSMP-
386x
Test Conditions
Total Resistance
R
T
(Ω)
22
I
F
= 1 mA
f = 100 MHz
Carrier Lifetime
τ
(ns)
500
I
F
= 50 mA
T
R
= 250 mA
Reverse Recovery Time
T
rr
(ns)
80
V
R
= 10 V
I
F
= 20 mA
90% Recovery
Total Capacitance
C
T
(pF)
0.20
V
R
= 50 V
f = 1 MHz
Typical Performance, T
C
= 25°C, each diode
0.35
1000
INPUT INTERCEPT POINT (dBm)
T
A
= +85°C
T
A
= +25°C
T
A
= –55°C
120
TOTAL CAPACITANCE (pF)
0.30
1 MHz
0.25
100 MHz
0.20
1 GHz
RESISTANCE (OHMS)
100
Diode Mounted as a
Series Switch in a
115
50
Ω
Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
10
0.15
0
2
4
6
8
10 12 14 16 18 20
1
0.01
0.1
1
10
100
1
10
30
REVERSE VOLTAGE (V)
BIAS CURRENT (mA)
I
F
– FORWARD BIAS CURRENT (mA)
Figure 1. RF Capacitance vs. Reverse
Bias.
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
Figure 3. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current for Switch Diodes.
T
rr
– REVERSE RECOVERY TIME (ns)
1000
100
I
F
– FORWARD CURRENT (mA)
10
V
R
= 5 V
100
V
R
= 10 V
V
R
= 20 V
1
0.1
125°C 25°C –50°C
10
10
0.01
20
FORWARD CURRENT (mA)
30
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
– FORWARD VOLTAGE (mA)
Figure 4. Reverse Recovery Time vs.
Forward Current for Various Reverse
Voltages.
Figure 5. Forward Current vs.
Forward Voltage.
Equivalent Circuit Model
HSMP-386x Chip*
R
s
R
j
1.5
Ω
C
j
0.12 pF
R
T
= 1.5 + R
j
C
T
= C
P
+ C
j
12
R
j
=
0.9
Ω
I
I = Forward Bias Current in mA
* See AN1124 for package models
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
