3
Typical Parameters at T
C
= 25°C
Part Number
HSMP-
381x
Test Conditions
Series Resistance
R
S
(Ω)
75
I
F
= 1 mA
f = 100 MHz
Carrier Lifetime
τ
(ns)
1500
I
F
= 50 mA
I
R
= 250 mA
Reverse Recovery Time
T
rr
(ns)
300
V
R
= 10 V
I
F
= 20 mA
90% Recovery
Total Capacitance
C
T
(pF)
0.27 @ 50 V
f = 1 MHz
Typical Parameters at T
C
= 25°C (unless otherwise noted), Single Diode
0.45
TOTAL CAPACITANCE (pF)
10000
T
A
= +85°C
T
A
= +25°C
T
A
= –55°C
INPUT INTERCEPT POINT (dBm)
120
RF RESISTANCE (OHMS)
0.40
0.35
1 MHz
0.30
0.25
0.20
frequency>100 MHz
0.15
0
2
4
6
8
10 12 14 16 18 20
30 MHz
1000
Diode Mounted as a
110 Series Attenuator
in a 50 Ohm Microstrip
100 and Tested at 123 MHz
90
80
70
60
50
40
1000
100
10
100
10
1
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
I
F
– FORWARD BIAS CURRENT (mA)
DIODE RF RESISTANCE (OHMS)
Figure 1. RF Capacitance vs. Reverse
Bias.
Figure 2. RF Resistance vs. Forward
Bias Current.
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
100
I
F
– FORWARD CURRENT (mA)
Typical Applications for Multiple Diode Products
VARIABLE BIAS
10
1
0.1
125°C 25°C –50°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
– FORWARD VOLTAGE (mA)
INPUT
RF IN/OUT
Figure 4. Forward Current vs.
Forward Voltage.
FIXED
BIAS
VOLTAGE
Figure 5. Four Diode
π
Attenuator. See Application Note 1048
for Details.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
