HMPP-389x Series Typical Performance,
T
c
= 25°C, each diode
0.50
0.45
120
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
1
10
I
F
– FORWARD BIAS CURRENT (mA)
30
Intercept point
will be higher
at higher
frequencies
RF RESISTANCE (OHMS)
10
0.40
0.35
0.30
0.25
0.20
1 GHz
0.15
0
4
8
12
16
20
1 MHz
1
0.1
1
10
100
I
F
– FORWARD BIAS CURRENT (mA)
V
R
– REVERSE VOLTAGE (V)
Figure 1. Total RF Resistance at 25°C vs.
Forward Bias Current.
Figure 2. Capacitance vs. Reverse Voltage.
INPUT INTERCEPT POINT (dBm)
0.8
1.0
1.2
3
4
1
TOTAL CAPACITANCE (pF)
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current.
200
100
T
rr
– REVERSE RECOVERY TIME (nS)
160
V
R
= –2V
120
I
F
– FORWARD CURRENT (mA)
10
1
80
V
R
= –5V
40
V
R
= –10V
0
10
15
20
25
30
0.1
0.01
125°C 25°C –50°C
0
0.2
0.4
0.6
FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Figure 4. Typical Reverse Recovery Time vs.
Reverse Voltage.
Figure 5. Forward Current vs. Forward Voltage.
Typical Applications
RF COMMON
RF COMMON
2
1
RF 1
3
4
RF 2
RF 1
2
2
1
3
4
RF 2
BIAS 1
BIAS 2
BIAS
Figure 6. Simple SPDT Switch Using Only Positive Bias.
Figure 7. High Isolation SPDT Switch Using Dual Bias.
3
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