6
HFBR-2316T Receiver Absolute Maximum Ratings
Parameter
Storage Temperature
Operating Temperature
Lead Soldering Temperature
Cycle Time
Signal Pin Voltage
Supply Voltage
Output Current
V
O
V
CC
- V
EE
I
O
-0.5
-0.5
Symbol
T
S
T
A
Min.
-55
-40
Max.
85
+85
260
10
V
CC
6.0
25
Unit
°C
°C
°C
s
V
V
mA
Note 2
Note 1
Reference
CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component's
susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be
taken in handling and assembly of this component to prevent damage and/or degradation which may be
induced by ESD.
HFBR-2316T Receiver Electrical/Optical and Dynamic Characteristics
0 to 70°C; 4.75 V < V
CC
- V
EE
< 5.25 V; power supply must be filtered (see note 2).
Parameter
Responsitivity
Symbol
R
P
62.5
µm
Min. Typ.
[3]
6.5
13
Max.
19
Unit
mV/µW
Condition
λ
p
= 1300 nm, 50 MHz
Multimode Fiber
62.5/125
µm
Singlemode Fiber
9/125µm
0.59
1.0
Equivalent Optical
Noise Input Power
(RMS)
Peak Input Optical
Power
Output Resistance
DC Output Voltage
Supply Current
Electrical Bandwidth
Bandwidth * Rise
Time Product
Electrical Rise, Fall
Times, 10-90%
Pulse-Width
Distortion
Overshoot
t
r
,t
f
PWD
P
N, RMS
-45
0.032
P
R
R
O
V
O,DC
I
CC
BW
E
75
0.8
30
1.8
9
125
0.41
3.3
0.4
2
5.3
1.0
2.6
15
-41.5
0.071
-11.0
80
mV
RMS
mV
RMS
dBm
µW
dBm
µW
Ohm
V
mA
MHz
Hz *s
ns
ns
%
P
R
= -15 dBm peak,
@ 50 MHz
P
R
= -11 dBm, peak
P
R
= -15 dBm, peak
f = 50 MHz
V
CC
= 5 V, V
EE
= 0 V
P
R
= 0
µW
R
LOAD
=
∞
-3 dB electrical
Note 7
Note 11
Note 8
Fig. 9
Note 6,9
Fig. 8
Note 10
50 MHz, 1 ns PWD
Note 6
Fig. 8
100 MHz Bandwidth,
P
R
= 0
µW
Unfiltered Bandwidth
P
R
= 0
µW
@ 100 MHz, P
R
= 0
µW
Note 5
Note 5
Fig. 7
Ref.
Note 4
Fig. 6,
10
R
P
9
µm
RMS Output Noise
Voltage
V
NO
8.5
17
0.4