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ATF-58143-TR1G 参数 Datasheet PDF下载

ATF-58143-TR1G图片预览
型号: ATF-58143-TR1G
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声增强模式伪HEMT的表面贴装塑料封装 [Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
文件页数/大小: 10 页 / 150 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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ATF-58143 Typical Scattering Parameters,
V
DS
= 3V, I
DS
= 30 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Mag.
0.98
0.81
0.75
0.73
0.69
0.66
0.65
0.63
0.61
0.61
0.62
0.64
0.66
0.68
0.69
0.71
0.74
0.78
0.84
0.87
0.89
0.90
0.93
0.96
0.94
0.96
0.93
S
11
Ang.
-17.1
-92.0
-126.4
-132.2
-153.2
-165.9
-169.3
176.3
160.7
147.4
133.8
123.7
112.5
103.7
93.0
77.2
58.3
39.7
25.1
10.2
-3.9
-20.0
-31.4
-43.9
-54.2
-65.1
-79.8
dB
27.29
25.25
21.87
21.18
18.38
16.74
16.40
14.83
13.51
12.35
11.28
10.32
9.41
8.61
7.84
6.47
5.14
3.77
2.55
1.25
0.19
-1.09
-2.53
-4.00
-5.46
-7.14
-8.81
Mag.
23.14
18.31
12.40
11.46
8.31
6.88
6.61
5.51
4.74
4.15
3.66
3.28
2.96
2.70
2.47
2.11
1.81
1.54
1.34
1.16
1.02
0.88
0.75
0.63
0.53
0.44
0.36
S
21
Ang.
168.7
123.7
103.4
99.8
85.1
75.4
73.1
61.9
50.9
40.4
30.2
20.5
11.1
2.1
-7.3
-24.8
-43.1
-60.7
-78.8
-97.1
-114.0
-132.2
-148.3
-162.8
-176.5
168.6
153.8
S
12
dB
-40.10
-28.10
-26.12
-25.87
-24.70
-23.86
-23.65
-22.71
-21.87
-21.10
-20.45
-19.86
-19.39
-18.87
-18.44
-17.63
-17.13
-16.67
-16.21
-16.04
-15.72
-15.86
-16.22
-16.73
-17.15
-17.68
-18.36
Mag.
0.010
0.039
0.049
0.051
0.058
0.064
0.066
0.073
0.081
0.088
0.095
0.102
0.107
0.114
0.120
0.131
0.139
0.147
0.155
0.158
0.164
0.161
0.154
0.146
0.139
0.131
0.121
Ang.
80.8
45.7
34.8
33.4
29.4
27.4
26.9
24.4
21.1
17.7
13.5
9.3
4.9
0.7
-4.4
-14.6
-26.1
-37.0
-50.2
-64.2
-78.3
-93.6
-106.5
-118.2
-128.6
-142.4
-155.6
S
22
MSG/MAG
Mag. Ang.
dB
0.67
0.42
0.32
0.31
0.25
0.23
0.22
0.19
0.17
0.15
0.13
0.13
0.13
0.14
0.14
0.17
0.19
0.24
0.34
0.41
0.46
0.52
0.58
0.66
0.72
0.74
0.77
-12.1
-46.6
-66.7
-72.3
-90.8
-103.6
-106.0
-118.1
-133.3
-145.4
-155.7
-175.4
166.2
152.8
140.7
120.7
95.4
70.1
52.4
37.3
21.5
2.5
-14.1
-26.0
-36.3
-49.0
-64.8
33.69
26.68
23.99
23.52
21.54
20.30
20.03
18.77
17.69
16.73
15.86
15.09
14.40
13.74
13.14
12.06
11.14
10.22
9.39
8.65
7.96
7.39
6.85
6.36
5.85
5.27
4.77
Typical Noise Parameters,
V
DS
= 3V, I
DS
= 30 mA
Freq
GHz
0.5
0.9
1.0
1.5
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
F
min
dB
0.12
0.18
0.20
0.32
0.43
0.45
0.51
0.58
0.75
0.87
1.01
1.04
Γ
opt
Mag.
0.39
0.37
0.36
0.32
0.30
0.30
0.29
0.31
0.35
0.42
0.50
0.53
Γ
opt
Ang.
17.775
46.9
53.525
80
101
107.7
125.2
154.475
-156.95
-120.93
-100.83
-97.15
R
n/50
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.06
0.09
0.15
0.18
G
a
dB
MSG/MAG and S
21
(dB)
40
35
30
25
20
15
10
5
0
-5
-10
-15
0
5
10
FREQUENCY (GHz)
15
20
S
21
MSG
25.33
22.26
21.54
19.16
17.65
17.33
16.23
14.77
13.39
11.92
11.07
10.93
Figure 19. MSG/MAG and S
21
vs. Frequency
at 3V, 30 mA.
Notes:
1. F
min
values at 2 GHz and higher are based on measurements while the F
mins
below 2 GHz have been extrapolated. The F
min
values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements F
min
is calculated. Refer to
the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
6