ATF-541M4 Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Gain
OIP3
P1dB
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
[1]
Gain
[1]
Output 3
rd
Order
Intercept Point
[1]
1dB Compressed
Output Power
[1]
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 4 mA
Vds = 3V, Vgs = 0V
Vds = 3V, gm =
∆Idss/∆Vgs;
∆Vgs
= 0.75 – 0.7 = 0.05V
Vgd = Vgs = -3V
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.4
0.18
—
230
—
—
—
15.5
—
33
—
—
—
Typ.
0.58
0.36
0.28
398
—
0.5
0.5
17.5
18.1
35.8
35.9
21.4
22.1
Max.
0.75
0.52
5
560
200
0.9
—
18.5
—
—
—
—
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag
= 0.11
Γ_ang
= 141°
(0.5 dB loss)
DUT
Output
Matching Circuit
Γ_mag
= 0.314
Γ_ang
= -167°
(0.5 dB loss)
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
Symbol
Fmin
Parameter and Test Condition
Minimum Noise Figure
[2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Units
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
dB
dBm
dBm
dB
dB
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
0.16
0.46
0.8
1.17
22.4
18.7
14.5
11.9
35
35.1
36.6
37.6
19.5
20.8
20.4
19.4
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ga
Associated Gain
[2]
OIP3
Output 3
rd
Order
Intercept Point
[3]
P1dB
1dB Compressed
Output Power
[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Notes:
2. Fmin and associated gain at minimum noise figure (Ga) values are based on a set of 16 noise figure measurements made at 16 different impedances
using an ATN NP5 test system. From these measurements a true Fmin and Ga is calculated. Refer to the noise parameter application section for more
information.
3. P
1dB
and OIP3 measurements made in an InterContinental Microwave (ICM) test fixture with double stub tuners and bias tees. The input was tuned for
minimum noise figure and the output was tuned for maximum OIP3.
3
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