ATF-531P8 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
Symbol
Parameter
Units
Maximum
VDS
VGS
Drain–Source Voltage[2]
Gate–Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
V
7
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 16 mW/°C for TB > 87°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +24 dBm RF Input
Power provided IGS is limited to 20mA. IGS
V
-5 to 1
-5 to 1
300
VGD
IDS
V
mA
mA
W
IGS
Gate Current
20
Pdiss
Pin max.
TCH
Total Power Dissipation[3]
RF Input Power
1
at P
drive level is bias circuit dependent.
1dB
dBm
°C
+24
150
Channel Temperature
Storage Temperature
Thermal Resistance[4]
TSTG
θch_b
°C
-65 to 150
63
°C/W
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA[5,6]
160
120
80
40
0
180
150
120
90
400
300
200
100
Cpk = 1.2
Cpk = 1.0
0.9 V
0.8 V
Stdev = 0.71
Stdev = 0.14
-3 Std
+3 Std
-3 Std
+3 Std
0.7 V
60
0.6 V
0.5 V
30
0
0
0
37
35
36
38
39
40
41
0
0.3
0.6
0.9
1.2
1
2
3
4
5
6
7
OIP3 (dBm)
NF (dB)
V
(V)
DS
Figure 3. OIP3
LSL = 35.5, Nominal = 38.1.
Figure 2. NF
Nominal = 0.6, USL = 1.0.
Figure 1. Typical I-V Curves
(V = 0.1 per step).
gs
300
250
200
150
100
50
240
200
160
Cpk = 2.0
Stdev = 0.12
+3 Std
Stdev = 0.21
-3 Std
+3 Std
-3 Std
120
80
40
0
18.5
0
24.2
19.5
24.6
20.5
21.5
24.4
24.8
25
25.2
GAIN (dB)
P1dB (dBm)
Figure 4. Small Signal Gain
LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.
Figure 5. P1dB
Nominal = 24.6.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
2
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