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ATF-531P8-TR2G 参数 Datasheet PDF下载

ATF-531P8-TR2G图片预览
型号: ATF-531P8-TR2G
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器PC
文件页数/大小: 16 页 / 143 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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Agilent ATF-531P8 High Linearity  
Enhancement Mode[1]  
Pseudomorphic HEMT in  
2x2 mm2 LPCC[3] Package  
Data Sheet  
Features  
Single voltage operation  
High linearity and gain  
Low noise figure  
Pin Connections and  
Package Marking  
Description  
Agilent Technologies’s  
Excellent uniformity in product  
specifications  
ATF-531P8 is a single-voltage  
high linearity, low noise  
E-pHEMT housed in an 8-lead  
JEDEC-standard leadless  
plastic chip carrier (LPCC[3])  
package. The device is ideal as  
a high linearity, low-noise,  
medium-power amplifier. Its  
operating frequency range is  
from 50 MHz to 6 GHz.  
Small package size:  
Pin 8  
Pin 7 (Drain)  
Pin 6  
Pin 1 (Source)  
Pin 2 (Gate)  
Pin 3  
2.0 x 2.0 x 0.75 mm  
Point MTTF > 300 years[2]  
MSL-1 and lead-free  
Pin 5  
Pin 4 (Source)  
Tape-and-reel packaging option  
available  
Bottom View  
Pin 1 (Source)  
Pin 8  
Specifications  
The thermally efficient package  
measures only 2 mm x 2 mm x  
0.75 mm. Its backside  
2 GHz; 4V, 135 mA (Typ.)  
Pin 2 (Gate)  
Pin 3  
Pin 7 (Drain)  
Pin 6  
3Px  
38 dBm output IP3  
0.6 dB noise figure  
20 dB gain  
metalization provides excellent  
thermal dissipation as well as  
visual evidence of solder reflow.  
The device has a Point MTTF of  
over 300 years at a mounting  
temperature of +85°C. All  
Pin 4 (Source)  
Pin 5  
Top View  
Note:  
10.7 dB LFOM[4]  
Package marking provides orientation and  
identification:  
24.5 dBm output power at 1 dB gain  
compression  
“3P” = Device Code  
devices are 100% RF & DC tested.  
“x” = Date code indicates the month of  
manufacture.  
Note:  
1. Enhancement mode technology employs a  
single positive Vgs, eliminating the need of  
negative gate voltage associated with  
conventional depletion mode devices.  
Applications  
Front-end LNA Q1 and Q2 driver or  
pre-driver amplifier for Cellular/  
PCS and WCDMA wireless  
infrastructure  
2. Refer to reliability datasheet for detailed  
MTTF data.  
3. Conforms to JEDEC reference outline MO229  
for DRP-N  
Driver amplifier for WLAN,  
WLL/RLL and MMDS applications  
4. Linearity Figure of Merit (LFOM) is essentially  
OIP3 divided by DC bias power.  
General purpose discrete E-pHEMT  
for other high linearity applications  
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