ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model
Optimized for 0.1 – 6.0 GHz
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
L
GATE_IN
L=Lc
LOSSYL
L=Lb
R=Rb
C
C=Ca
G
L
SOURCE
L=La
S
LOSSYL
L=Lb
R=Rb
LOSSYL
L=Lb
R=Rb
L=Ld
L
DRAIN_OUT
R
R=0.1 OH
LOSSYL
L=Lb
R=Rb
LOSSYL
L=Lb
R=Rb
C=Cb
L
SOURCE
L=La *.5
C
D
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
ATF-34143 Die Model
*
STATZ MESFET MODEL
*
MODEL = FET
Parasitics
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
IDS model
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
Gate model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Breakdown
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Noise
FNC=01e+6
R=.17
P=.65
C=.2
M o d e l s c a l fa c t o r s ( W = F E T w i d t h i n m i c r o n s )
XX
D
E QUAT I O N C d s = 0 . 0 1 * W / 2 0 0
E QUAT I O N B e t a = 0 . 0 6 * W / 2 0 0
E QUAT I O N R d = 2 0 0 / W
E QUAT I O N R s = . 5 * 2 0 0 / W
E QUAT I O N C g s = 0 . 2 * W / 2 0 0
E QUAT I O N C g d = 0 . 0 4 * W / 2 0 0
E QUAT I O N L g = 0 . 0 3 * 2 0 0 / W
E QUAT I O N L d = 0 . 0 3 * 2 0 0 / W
E QUAT I O N L s = 0 . 0 1 * 2 0 0 / W
E QUAT I O N R c = 5 0 0 * 2 0 0 / W
NFETMESFET
XX
G
MODEL=FET
S
XX
S
W=800
µm
12
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
