ATF-10136 Absolute Maximum Ratings
Symbol
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
[2,3]
Channel Temperature
Storage Temperature
[4]
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
+
5
-4
-7
I
DSS
430
175
-65 to +175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 2.9 mW/°C for
T
CASE
> 25°C.
4. Storage above +150°C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
Thermal Resistance:
Liquid Crystal Measurement:
θ
jc
= 350°C/W; T
CH
= 150°C
1
µm
Spot Size
[5]
Part Number Ordering Information
Part Number
ATF-10136-TR1
ATF-10136-STR
Devices Per Reel
1000
10
Reel Size
7"
STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
ATF-10136 Noise Parameters:
V
DS
= 2 V, I
DS
= 25 mA
Freq.
GHz
0.5
1.0
2.0
4.0
6.0
8.0
NF
O
dB
0.35
0.4
0.4
0.5
0.8
1.1
Γ
opt
Mag
0.93
0.85
0.70
0.39
0.36
0.45
Ang
12
24
47
126
-170
-100
R
N
/50
0.80
0.70
0.46
0.36
0.12
0.38
ATF-10136 Typical Performance, T
A
= 25°C
18
15
G
A
(dB)
2.0
1.5
NF
O
(dB)
1.0
0.5
0
2.0
NF
O
G
A
16
14
G
A
30
G
A
(dB)
25
20
GAIN (dB)
15
10
|S
21
|
2
MAG
MSG
12
9
12
10
1.5
NF
O
(dB)
6
1.0
NF
O
0.5
0
5
0
0.5
4.0
6.0
8.0 10.0 12.0
0
10
20
30
I
DS
(mA)
40
50
60
1.0
2.0
4.0
6.0 8.0 12.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2V, I
DS
= 25 mA, T
A
= 25°C.
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
DS
.
V
DS
= 2V, f = 4.0 GHz.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 25 mA.
5-24
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
