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AT-42086-TR1 参数 Datasheet PDF下载

AT-42086-TR1图片预览
型号: AT-42086-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 高达6 GHz的中等功率硅双极晶体管 [Up to 6 GHz Medium Power Silicon Bipolar Transistor]
分类和应用: 晶体晶体管放大器
文件页数/大小: 5 页 / 56 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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AT-42086 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
20
12
80
500
150
-65 to 150
Thermal Resistance
[2,4]
:
θ
jc
= 140°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.1 mW/°C for T
C
> 80°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Part Number Ordering Information
Part Number
AT-42086-BLK
AT-42086-TR1
Increment
100
1000
Comments
Bulk
Reel
Note:
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Electrical Specifications, T
A
= 25°C
Symbol
|S
21E
|
2
Parameters and Test Conditions
Insertion Power Gain; V
CE
= 8 V, I
C
= 35 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units
dB
Min.
15.0
Typ. Max.
16.5
10.5
4.5
20.5
20.0
13.5
9.0
1.9
3.5
13.0
9.0
8.0
30
150
270
0.2
2.0
P
1 dB
G
1 dB
NF
O
G
A
f
T
h
FE
I
CBO
I
EBO
C
CB
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 35 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 35 mA
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 35 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 35 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
dBm
dB
dB
dB
GHz
µA
µA
pF
0.32
Note:
1. For this test, the emitter is grounded.
4-175