Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42086
Features
• High Output Power:
20.5 dBm Typical P
1 dB
at 2.0 GHz
• High Gain at 1 dB
Compression:
13.5 dB Typical G
1 dB
at 2.0 GHz
• Low Noise Figure:
1.9 dB Typical NF
O
at 2.0 GHz
• High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
[1]
BASE
1
420
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. Applications
include use in wireless systems as
an LNA, gain stage, buffer, oscilla-
tor, and mixer. An optimum noise
match near 50
Ω
up to 1 GHz,
makes this device easy to use as a
low noise amplifier.
The AT-42086 bipolar transistor is
fabricated using Hewlett- Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
86 Plastic Package
Pin Connections
EMITTER
4
COLLECTOR
3
Description
Hewlett-Packard’s AT-42086 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42086 is housed in a low cost
surface mount .085" diameter
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconductor
Devices.”
2
EMITTER
5965-8914E
4-174
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
